Characterization of deep levels in GaInP on Ge and Ge-on-Si substrates by photoluminescence and cathodoluminescence
- Title
- Characterization of deep levels in GaInP on Ge and Ge-on-Si substrates by photoluminescence and cathodoluminescence
- Author
- 박진섭
- Keywords
- Cathodoluminescence; Photoluminescence; GaInP; Ge; Deep levels
- Issue Date
- 2013-04
- Publisher
- ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
- Citation
- JOURNAL OF CRYSTAL GROWTH, 2013, 370, p.168-172
- Abstract
- We investigated the deep level photoluminescence and cathodoluminescence emissions from GaInP grown on Ge and Ge-on-Si substrates by metal-organic chemical vapor deposition. Considering the interface condition after the growth of GaInP on Ge, we speculated that the P vacancies and/or Ge atoms from the underlying layer due to interdiffusion were responsible for the deep level emissions. Moreover, the anti-phase boundaries in GaInP, incompletely suppressed even when grown on off-axis Ge substrates, were also responsible for the deep level emissions. (C) 2012 Elsevier B.V. All rights reserved.
- URI
- https://www.sciencedirect.com/science/article/pii/S0022024812006367?via%3Dihubhttp://hdl.handle.net/20.500.11754/49982
- ISSN
- 0022-0248
- DOI
- 10.1016/j.jcrysgro.2012.09.012
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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