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Perpendicular magnetization of CoZr/Pt multilayers

Title
Perpendicular magnetization of CoZr/Pt multilayers
Other Titles
Pt multilayers
Author
박완준
Keywords
Magnetic tunnel junction; Perpendicular magnetic anisotropy; Thermal magnetization stability
Issue Date
2012-05
Publisher
Korean Physical Society; 1999
Citation
JOURNAL- KOREAN PHYSICAL SOCIETY, 2012, 60(10), P.1690-1694, 5P.
Abstract
Recently, the perpendicular magnetization of tunnel junctions has been proposed as a way to reduce the size of spin-transfer torque random access memories. In order to determine the free layer of a magnetic tunnel junction, we present a Co(90)Zr(10) alloy that is expected to have a higher polarization than any other soft magnet. At a thickness of 0.6 nm, CoZr successfully forms a perpendicular magnetization because of the interfacial anisotropy on the CoZr/Pt interfaces. Unlike the Co/Pt multilayer, the CoZr/Pt multilayer shows magnetization recovery following 1.5-T field cooling after 300 A degrees C annealing because Zr insertion prevents the formation of a CoPt alloy. This work proposes CoZr as a free-layer candidate for magnetic tunnel junctions due to its advantages of lower switching current and higher thermal stability.
URI
https://link.springer.com/article/10.3938%2Fjkps.60.1690http://hdl.handle.net/20.500.11754/49859
ISSN
0374-4884; 3744-4884
DOI
10.3938/jkps.60.1690
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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