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dc.contributor.author정두석-
dc.date.accessioned2018-03-20T06:48:21Z-
dc.date.available2018-03-20T06:48:21Z-
dc.date.issued2014-12-
dc.identifier.citationNanoscale, 2014, 6(24), P.15151-15160en_US
dc.identifier.issn2040-3364-
dc.identifier.issn2040-3372-
dc.identifier.urihttp://pubs.rsc.org/en/Content/ArticleLanding/2014/NR/C4NR03405H#!divAbstract-
dc.description.abstractWe suggest a 'universal' electrical circuit for the realization of an artificial synapse that exhibits long-term plasticity induced by different protocols. The long-term plasticity of the artificial synapse is basically attributed to the nonvolatile resistance change of the bipolar resistive switch in the circuit. The synaptic behaviour realized by the circuit is termed 'universal' inasmuch as (i) the shape of the action potential is not required to vary so as to implement different plasticity-induction behaviours, activity-dependent plasticity (ADP) and spike-timing-dependent plasticity (STDP), (ii) the behaviours satisfy several essential features of a biological chemical synapse including firing-rate and spike-timing encoding and unidirectional synaptic transmission, and (iii) both excitatory and inhibitory synapses can be realized using the same circuit but different diode polarity in the circuit. The feasibility of the suggested circuit as an artificial synapse is demonstrated by conducting circuit calculations and the calculation results are introduced in comparison with biological chemical synapses.en_US
dc.description.sponsorshipD.S.J. acknowledges a Korea Institute of Science and Technology grant (grant no. 2Z04030). O.K. appreciates the support of an Australian Research Council (ARC) Discovery Project grant (no. DP140103448) from the University of Melbourne.en_US
dc.language.isoenen_US
dc.publisherRoyal SOC Chemistryen_US
dc.subjectTIMING-DEPENDENT PLASTICITYen_US
dc.subjectLONG-TERM POTENTIATIONen_US
dc.subjectPOPULATION CODESen_US
dc.subjectSYNAPTIC PLASTICITYen_US
dc.subjectNEUROMORPHIC SYSTEMSen_US
dc.subjectNEURONen_US
dc.subjectMEMORYen_US
dc.subjectMEMRISTORen_US
dc.subjectMODELen_US
dc.subjectIMPLEMENTATIONen_US
dc.titleMultiprotocol-induced plasticity in artificial synapsesen_US
dc.typeArticleen_US
dc.identifier.doi10.1039/c4nr03405h-
dc.relation.journalNANOSCALE-
dc.contributor.googleauthorKornijcuk, Vladimir-
dc.contributor.googleauthorKavehei, Omid-
dc.contributor.googleauthorLim, Hyungkwang-
dc.contributor.googleauthorSeok, Jun Yeong-
dc.contributor.googleauthorKim, Seong Keun-
dc.contributor.googleauthorKim, Inho-
dc.contributor.googleauthorLee, Wook-Seong-
dc.contributor.googleauthorChoi, Byung Joon-
dc.contributor.googleauthorJeong, Doo Seok-
dc.relation.code2014036383-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentDIVISION OF MATERIALS SCIENCE AND ENGINEERING-
dc.identifier.piddooseokj-
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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