Self-Rectifying Effect in Resistive Switching Memory Using Amorphous InGaZnO
- Title
- Self-Rectifying Effect in Resistive Switching Memory Using Amorphous InGaZnO
- Author
- 최덕균
- Keywords
- Resistive switching; self-rectifying; current hysteresis; ReRAM; interface; amorphous In-Ga-Zn-O
- Issue Date
- 2014-03
- Publisher
- Springer Science + Business Media
- Citation
- Journal of electronic materials, Vol.43 No.5 [2014], pp. 1384-1388
- Abstract
- Resistance random access memory (ReRAM) has received attention as next-generation memory because of its excellent operating properties and high density integration capability as a crossbar array. However, the application of the existing ReRAM as a crossbar array may lead to crosstalk between adjacent cells due to its symmetric I-V characteristics. In this study, the self-rectifying effect of contact between amorphous In-Ga-Zn-O (a-IGZO) and TaO (x) was examined in a Pt/a-IGZO/TaO (x) /Al2O3/W structure. The experimental results show not only self-rectifying behavior but also forming-free characteristics. During the deposition of a-IGZO on the TaO (x) , an oxygen-rich TaO (x) interfacial layer was formed. The rectifying effect was observed regardless of the interface formation and is believed to be associated with Schottky contact formation between a-IGZO and TaO (x) . The current level remained unchanged despite repeated DC sweep cycles. The low resistance state/high resistance state ratio was about 10(1) at a read voltage of -0.5 V, and the rectifying ratio was about 10(3) at +/- 2 V.
- URI
- http://link.springer.com/article/10.1007%2Fs11664-014-3083-8http://hdl.handle.net/20.500.11754/49609
- ISSN
- 0361-5235
- DOI
- 10.1007/s11664-014-3083-8
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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