Charge loss mechanism of non-volatile V3Si nano-particles memory device
- Title
- Charge loss mechanism of non-volatile V3Si nano-particles memory device
- Author
- 김은규
- Keywords
- RETENTION-TIME; SILICON NANOCRYSTALS; LEAKAGE CURRENTS; GATE OXIDES; ENERGY; DEPOSITION; SILICIDES; DENSITY; STORAGE; FILMS
- Issue Date
- 2012-12
- Publisher
- AMERICAN INSTITUTE OF PHYSICS
- Citation
- Applied Physics Letters, 2012, 101(23), P.233510
- Abstract
- We studied the charge loss mechanism of a non-volatile memory device with vanadium silicide (V3Si) nano-particles (NPs) embedded in a silicon dioxide dielectric layer. To fabricate the memory device, V3Si NPs with an average size of 4-6 nm were formed between the tunnel and control oxide layers by a thin film deposition and a post-annealing process at 800 degrees C for 5s. Using the gate structure containing the V3Si NPs, a flash memory structure was fabricated with a channel length and width of 5 mu m. This device maintained the memory window at about 1V after 10(4)s when program/erase voltages of +/- 9V were applied for 1 s. The activation energies of the V3Si NP memory devices with charge loss rates of 10%, 15%, 20%, and 25% were approximately 0.16, 0.24, 0.35, and 0.50 eV, respectively. The charge loss mechanism can be attributed to direct tunneling as a result of the NPs associating with the interface trap in the tunneling oxide, the Pool-Frenkel current, and the oxide defect. (C) 2012 American Institute of Physics.
- URI
- http://aip.scitation.org.access.hanyang.ac.kr/doi/10.1063/1.4770060http://hdl.handle.net/20.500.11754/48657
- ISSN
- 0003-6951
- DOI
- 10.1063/1.4770060
- Appears in Collections:
- COLLEGE OF NATURAL SCIENCES[S](자연과학대학) > PHYSICS(물리학과) > Articles
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