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Experimental observation of a practical limit on enhancement of the spontaneous emission rate in blue GaN-LEDs by mediating surface plasmons

Title
Experimental observation of a practical limit on enhancement of the spontaneous emission rate in blue GaN-LEDs by mediating surface plasmons
Author
이광걸
Keywords
Surface plasmons; Light emitting diodes
Issue Date
2014-09
Publisher
ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
Citation
CURRENT APPLIED PHYSICS, 2014, 14(12), p.1639-1642
Abstract
High modulation speed of light-emitting diodes (LEDs) is of primary importance for applications in optical communication. To this end, we experimentally investigated enhancement behaviors of the spontaneous emission rate (SER) of electronehole pairs in blue InGaN/GaN LEDs by mediating surface plasmons (SPs). The coupling strength of the electronehole recombination into SPs is controlled by etching the p-GaN layer between the active and metal layers to form thicknesses between 40 nm and 10 nm. While a tendency of increasing SER is theoretically expected for a smaller separation, the maximum value SER enhancement has a practical limit of about 2.5 at lambda = 441 nm, and separation of 20 nm due to damage on the p-GaN layer caused by the etching process. (C) 2014 Elsevier B.V. All rights reserved.
URI
https://www.sciencedirect.com/science/article/pii/S1567173914002909?via%3Dihubhttp://hdl.handle.net/20.500.11754/48280
ISSN
1567-1739; 1878-1675
DOI
10.1016/j.cap.2014.09.013
Appears in Collections:
COLLEGE OF NATURAL SCIENCES[S](자연과학대학) > PHYSICS(물리학과) > Articles
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