Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 이성재 | - |
dc.date.accessioned | 2018-03-16T04:23:21Z | - |
dc.date.available | 2018-03-16T04:23:21Z | - |
dc.date.issued | 2012-12 | - |
dc.identifier.citation | Journal of the Korean Physical Society, Dec 2012, 61(12), P.1990-1993, 4P. | en_US |
dc.identifier.issn | 0374-4884 | - |
dc.identifier.uri | https://link.springer.com/article/10.3938%2Fjkps.61.1990 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11754/47781 | - |
dc.description.abstract | Current-voltage (I-V) characteristics for various silicon wires of different length-to-width ratios were numerically calculated by solving the Poisson equation and the current continuity equations for electrons and holes self-consistently. We found that, as the silicon wire became thinner or the length-to-width aspect ratio becomes higher, the I-V data deviated more from the Ohmic relation: the current density at a certain bias voltage was larger. In the case of a 500-nm-long silicon wire with n-type doping of 1 × 1016 cm3, for example, the current density of a silicon wire at a bias voltage of 2 volts increased by nearly threefold as the length-to-width ratio of wires was increased from 1 to 25. This behavior is attributed to an enhanced field at the source due to the strong stray field configuration near the contacts at both ends of a wire and to the large carrier build-up in the middle. Our result suggests that a classical treatment of nanowire transport with a proper account of the nonuniform field distribution along the wire may partly explain the conductivity enhancement phenomenon often observed in various nanowires and nanotubes. | en_US |
dc.description.sponsorship | This work was supported by the research fund of Hanyang University (HY-2009-G). | en_US |
dc.language.iso | en | en_US |
dc.publisher | 한국물리학회 | en_US |
dc.subject | Conductivity | en_US |
dc.subject | Silicon nanowire | en_US |
dc.title | Conductivity Enhancement of Silicon Nanowires | en_US |
dc.type | Article | en_US |
dc.relation.no | 12 | - |
dc.relation.volume | 61 | - |
dc.identifier.doi | 10.3938/jkps.61.1990 | - |
dc.relation.page | 1990-1993 | - |
dc.relation.journal | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.contributor.googleauthor | Ko, Jae-Woo , | - |
dc.contributor.googleauthor | Park, Seongju | - |
dc.contributor.googleauthor | Li, Xianhong | - |
dc.contributor.googleauthor | Baek, In-Bok | - |
dc.contributor.googleauthor | Lee, Seongjae | - |
dc.contributor.googleauthor | Jang, Moongyu | - |
dc.relation.code | 2012205987 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF NATURAL SCIENCES[S] | - |
dc.sector.department | DEPARTMENT OF PHYSICS | - |
dc.identifier.pid | leesj | - |
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