Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 홍진표 | - |
dc.date.accessioned | 2018-03-15T08:40:09Z | - |
dc.date.available | 2018-03-15T08:40:09Z | - |
dc.date.issued | 2014-02 | - |
dc.identifier.citation | Journal of Materials Chemistry A, 2014, 2(8), P.1390-1395 | en_US |
dc.identifier.issn | 2050-7526 | - |
dc.identifier.issn | 2050-7534 | - |
dc.identifier.uri | http://pubs.rsc.org/en/Content/ArticleLanding/2014/TC/C3TC32341B#!divAbstract | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11754/47438 | - |
dc.description.abstract | Amorphous metal oxide thin film transistors (TFTs) are expected to serve as building blocks in a variety of devices, such as bendable displays, transparent mobile phones, and plastic newspapers. Here, we report a simple approach for highly stable solution-based zinc oxide (ZnO) TFTs by simply evaporating Al on the back channel layer without any additional chemical or plasma process for passivation. In particular, control and manipulation of Al nanoparticle (NP) formation represents one of the key approaches in this work. The possible sketch of the improved nature is proposed, along with various structural and electrical analyses. | en_US |
dc.description.sponsorship | This research was supported by the Converging Research Center Program funded by the Ministry of Education, Science and Technology (Project no. 2011K000877). | en_US |
dc.language.iso | en | en_US |
dc.publisher | Royal SOC Chemistry | en_US |
dc.subject | ZINC-OXIDE | en_US |
dc.subject | TEMPERATURE FABRICATION | en_US |
dc.subject | CHANNEL LAYER | en_US |
dc.subject | DOPED ZNO | en_US |
dc.subject | MOBILITY | en_US |
dc.subject | DIFFUSION | en_US |
dc.subject | GALLIUM | en_US |
dc.title | Highly stable solution-processed ZnO thin film transistors prepared via a simple Al evaporation process | en_US |
dc.type | Article | en_US |
dc.relation.no | 8 | - |
dc.relation.volume | 2 | - |
dc.identifier.doi | 10.1039/c3tc32341b | - |
dc.relation.page | 1390-1395 | - |
dc.relation.journal | JOURNAL OF MATERIALS CHEMISTRY C | - |
dc.contributor.googleauthor | Kang, Tae Sung | - |
dc.contributor.googleauthor | Kim, Tae Yoon | - |
dc.contributor.googleauthor | Lee, Gyu Min | - |
dc.contributor.googleauthor | Sohn, Hyun Chul | - |
dc.contributor.googleauthor | Hong, Jin Pyo | - |
dc.contributor.googleauthor | 강태성 | - |
dc.contributor.googleauthor | 김태윤 | - |
dc.contributor.googleauthor | 이규민 | - |
dc.contributor.googleauthor | 손현철 | - |
dc.contributor.googleauthor | 홍진표 | - |
dc.relation.code | 2014033725 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF NATURAL SCIENCES[S] | - |
dc.sector.department | DEPARTMENT OF PHYSICS | - |
dc.identifier.pid | jphong | - |
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