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dc.contributor.author박진구-
dc.date.accessioned2018-03-15T06:26:23Z-
dc.date.available2018-03-15T06:26:23Z-
dc.date.issued2014-01-
dc.identifier.citationMicroelectronic Engineering February 2014, 114, 98-104en_US
dc.identifier.issn0167-9317-
dc.identifier.urihttp://www.sciencedirect.com/science/article/pii/S0167931713006266?via%3Dihub-
dc.identifier.urihttp://hdl.handle.net/20.500.11754/47222-
dc.description.abstractCeria based slurries with additives are widely used in shallow trench isolation (STI) chemical mechanical planarization (CMP) process to obtain high selective removal of silicon dioxide over silicon nitride. In this study ceria from different sources were used as abrasives and l-proline and l-glutamic acid were used as additives, with a focus on identifying the interactions between abrasives and additives and their effect of selectivity. Ceria particles were characterized using X-ray diffraction (XRD), energy dispersive X-ray (EDX) spectroscopy, transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS) while the additive abrasive interactions were evaluated by UV?Visible spectroscopy and inductively coupled plasma optical emission spectroscopy (ICP-OES) analysis. While slurries with l-proline yielded high selectivity only with certain type of ceria, slurries with l-glutamic acid were found to be less sensitive to the ceria source than those with l-proline, and yielded high selectivity regardless of the source of ceria used. The purity of the abrasive and its crystal structure appear to play a significant role in determining the selectivity.en_US
dc.description.sponsorshipThe authors thank the Department of Science and Technology (DST), India (INT/Korea/P-01) and National Research Foundation (NRF), Korea (2011-0027711) for financing this joint venture project between India and Korea. We also thank DST-FIST funding for the EDX analysis, SAIF IIT-Madras for ICP-OES analysis and Sodiff Inc., Korea for supplying the ceria abrasives.en_US
dc.language.isoenen_US
dc.publisherElsevier B.Ven_US
dc.subjectShallow trench isolationen_US
dc.subjectCMPen_US
dc.subjectHigh selectivityen_US
dc.subjectCeriaen_US
dc.subjectAmino acidsen_US
dc.titleAbrasive and additive interactions in high selectivity STI CMP slurriesen_US
dc.typeArticleen_US
dc.relation.volume114-
dc.identifier.doi10.1016/j.mee.2013.10.004-
dc.relation.page98-104-
dc.relation.journalMICROELECTRONIC ENGINEERING-
dc.contributor.googleauthorPraveen, B.V.S.-
dc.contributor.googleauthorManivannan, R.-
dc.contributor.googleauthorUmashankar, T.D.-
dc.contributor.googleauthorCho, Byoung-Jun-
dc.contributor.googleauthorPark, Jin-Goo-
dc.contributor.googleauthorRamanathan, S.-
dc.relation.code2014036027-
dc.sector.campusS-
dc.sector.daehakGRADUATE SCHOOL[S]-
dc.sector.departmentDEPARTMENT OF BIONANOTECHNOLOGY-
dc.identifier.pidjgpark-
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GRADUATE SCHOOL[S](대학원) > BIONANOTECHNOLOGY(바이오나노학과) > Articles
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