Significant electrical control of amorphous oxide thin film transistors by an ultrathin Ti surface polarity modifier
- Title
- Significant electrical control of amorphous oxide thin film transistors by an ultrathin Ti surface polarity modifier
- Author
- 전형탁
- Keywords
- CARRIER TRANSPORT; SEMICONDUCTOR; TFTS
- Issue Date
- 2014-01
- Publisher
- AMER INST PHYSICS, CIRCULATION & FULFILLMENT DIV, 2 HUNTINGTON QUADRANGLE, STE 1 N O 1, MELVILLE, NY 11747-4501 USA
- Citation
- APPLIED PHYSICS LETTERS, Vol.104, No.4,
- Abstract
- We demonstrate an enhanced electrical stability through a Ti oxide (TiOx) layer on the amorphous InGaZnO (a-IGZO) back-channel; this layer acts as a surface polarity modifier. Ultrathin Ti deposited on the a-IGZO existed as a TiOx thin film, resulting in oxygen cross-binding with a-IGZO surface. The electrical properties of a-IGZO thin film transistors (TFTs) with TiOx depend on the surface polarity change and electronic band structure evolution. This result indicates that TiOx on the back-channel serves as not only a passivation layer protecting the channel from ambient molecules or process variables but also a control layer of TFT device parameters. (C) 2014 AIP Publishing LLC.
- URI
- http://aip.scitation.org/doi/pdf/10.1063/1.4862537http://hdl.handle.net/20.500.11754/46963
- ISSN
- 0003-6951; 1077-3118
- DOI
- 10.1063/1.4862537
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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