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dc.contributor.author장재영-
dc.date.accessioned2018-03-13T08:56:19Z-
dc.date.available2018-03-13T08:56:19Z-
dc.date.issued2014-05-
dc.identifier.citationACS APPLIED MATERIALS & INTERFACES, 권: 6, 호: 9, 페이지: 6816-6824en_US
dc.identifier.issn1944-8244-
dc.identifier.urihttps://pubs.acs.org/doi/10.1021/am500618g-
dc.identifier.urihttp://hdl.handle.net/20.500.11754/46262-
dc.description.abstractChemical vapor deposition-grown graphene has been an attractive electrode material for organic electronic devices, such as organic field-effect transistors (OFETs), because it is highly conductive and provides good oxidation and thermal stability properties. However, it still remains a challenge to demonstrate organic complementary circuits using graphene electrodes because of the relatively poor performance of n-type OFETs. Here, we report the development of high-performance organic complementary inverters using graphene as source/drain electrodes and N, N'-ditridecyl-3,4,9,10-perylenetetracarboxylic diimide (PTCDI-C13) and pentacene as n- and p-type organic semiconductors, respectively. Graphene electrodes were n-doped via the formation of NH2-terminated self-assembled monolayers that lowered the work function and the electron injection barrier between the graphene and PTCDI-C13. Thermal annealing improved the molecular packing among PTCDI-C13 groups on the graphene surface, thereby increasing the crystallinity and grain size. The thermally annealed PTCDI-C13 OFETs prepared using n-doped graphene electrodes exhibited a good field-effect mobility of up to 0.43 cm(2)/(V s), which was comparable to the values obtained from other p-type pentacene OFETs. By integrating p- and n-type OFETs, we successfully fabricated organic complementary inverters that exhibited highly symmetric operation with an excellent voltage gain of up to 124 and good noise margin.en_US
dc.description.sponsorshipThe authors thank Dr. Won Min Yun for experimental support and helpful discussions. This work was supported by a grant (2011-0031639) from the Center for Advanced Soft Electronics under the Global Frontier Research Program of the Ministry of Education, Science and Technology, Korea. The authors also thank the Pohang Accelerator Laboratory for providing access to the 4D and the 5A beamlines used in this study.en_US
dc.language.isoenen_US
dc.publisherAMER CHEMICAL SOC, 1155 16TH ST, NW, WASHINGTON, DC 20036 USAen_US
dc.subjectgrapheneen_US
dc.subjectchemical vapor depositionen_US
dc.subjectn-type organic semiconductorsen_US
dc.subjectorganic complementary invertersen_US
dc.subjectwork functionen_US
dc.subjectthermal annealingen_US
dc.titleHigh-Performance Organic Complementary Inverters Using Monolayer Graphene Electrodesen_US
dc.typeArticleen_US
dc.relation.no9-
dc.relation.volume6-
dc.identifier.doi10.1021/am500618g-
dc.relation.page6816-6824-
dc.relation.journalACS APPLIED MATERIALS & INTERFACES-
dc.contributor.googleauthorJeong, Yong Jin-
dc.contributor.googleauthorJang, Jaeyoung-
dc.contributor.googleauthorNam, Sooji-
dc.contributor.googleauthorKim, Kyunghun-
dc.contributor.googleauthorKim, Lae Ho-
dc.contributor.googleauthorPark, Seonuk-
dc.contributor.googleauthorAn, Tae Kyu-
dc.contributor.googleauthorPark, Chan Eon-
dc.relation.code2014023980-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentDEPARTMENT OF ENERGY ENGINEERING-
dc.identifier.pidjyjang15-
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ENERGY ENGINEERING(에너지공학과) > Articles
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