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dc.contributor.author방진호-
dc.date.accessioned2018-03-13T02:14:26Z-
dc.date.available2018-03-13T02:14:26Z-
dc.date.issued2013-06-
dc.identifier.citationAdvanced Materials, 18 June 2013, 25(23), p.3187-3191en_US
dc.identifier.issn1521-4095-
dc.identifier.urihttp://onlinelibrary.wiley.com/doi/10.1002/adma.201300973/abstract-
dc.identifier.urihttp://hdl.handle.net/20.500.11754/45760-
dc.description.abstractThrough metal-assisted chemical etching (MaCE), superior purification of dirty Si is observed, from 99.74 to 99.9884% for metallurgical Si and from 99.999772 to 99.999899% for upgraded metallurgical Si. In addition, large area of silicon nanowires (SiNW) are fabricated. The purification effect induces a ∼35% increase in photocurrent for SiNW based photoelectrochemical cell.en_US
dc.language.isoenen_US
dc.publisherWILEYen_US
dc.subjectmetal assisted chemical etchingen_US
dc.subjectmetal impuritiesen_US
dc.subjectmetallurgical siliconen_US
dc.subjectphotoelectrochemical cellen_US
dc.subjectsilicon nanowireen_US
dc.titleUpgraded Silicon Nanowires by Metal-Assisted Etching of Metallurgical Silicon: A New Route to Nanostructured Solar-Grade Siliconen_US
dc.typeArticleen_US
dc.relation.no23-
dc.relation.volume25-
dc.identifier.doi10.1002/adma.201300973-
dc.relation.page3187-3191-
dc.relation.journalADVANCED MATERIALS-
dc.contributor.googleauthorLi, X.-
dc.contributor.googleauthorMiclea, P.-T-
dc.contributor.googleauthorSchweizer, S.L-
dc.contributor.googleauthorWehrspohn, R.B-
dc.contributor.googleauthorXiao, Y.-
dc.contributor.googleauthorJung, J.-Y-
dc.contributor.googleauthorLee, J.-H-
dc.contributor.googleauthorBang, J.H-
dc.contributor.googleauthorLausch, D-
dc.contributor.googleauthorMeyer, S-
dc.relation.code2013008681-
dc.sector.campusS-
dc.sector.daehakGRADUATE SCHOOL[S]-
dc.sector.departmentDEPARTMENT OF BIONANOTECHNOLOGY-
dc.identifier.pidjbang-
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GRADUATE SCHOOL[S](대학원) > BIONANOTECHNOLOGY(바이오나노학과) > Articles
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