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Optical Properties and Field Emission of ZnO Nanorods Grown on p-Type Porous Si

Title
Optical Properties and Field Emission of ZnO Nanorods Grown on p-Type Porous Si
Author
이휘건
Keywords
Electroluminescence; Field emission; N-Type ZnO nanorod; Photoluminescence; Porous silicon
Issue Date
2013-06
Publisher
Korean Chemical Society
Citation
Bulletin of the Korean Chemical Society, 20 June 2013, 34(6), p.1779-1782
Abstract
N-type ZnO nanorods were grown on p-type porous silicon using a chemical bath deposition (CBD) method (p-n diode). The structure and geometry of the device were examined by field-emission scanning electron microscopy (FE-SEM) and X-ray diffraction (XRD) while the optoelectronic properties were investigated by UV/Vis absorption spectrometry as well as photoluminescence and electroluminescence measurements. The field emission (FE) properties of the device were also measured and its turn-on field and current at 6 were determined. In principle, the growth of ZnO nanorods on porous siicon for optoelectronic applications is possible.
URI
http://www.koreascience.or.kr/article/ArticleFullRecord.jsp?cn=JCGMCS_2013_v34n6_1779http://hdl.handle.net/20.500.11754/45713
ISSN
0253-2964; 1229-5949
DOI
10.5012/bkcs.2013.34.6.1779
Appears in Collections:
COLLEGE OF NATURAL SCIENCES[S](자연과학대학) > CHEMISTRY(화학과) > Articles
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