Characteristics of Tin Oxide-Based Thin Film Transistors Prepared by DC Magnetron Sputtering

Abstract

Here we demonstrate the fabrication of SnOx thin-film transistors (TFTs), where SnOx thin films are deposited as an active channel layer by DC magnetron sputtering. We analyzed the effects of the oxygen partial pressure ratio and post-deposition heat treatment (PDHT) on the characteristics of the SnOx thin films. We found improved performance of the TFTs obtained by using interface modification with the optimized deposition condition of SnOx thin films. These results are helpful for fabricating oxide-TFTs, including simple binary oxide semiconductors, as an active channel layer.