Swing and Phase-Noise Enhanced VCO With Capacitive-Division Dynamic-Threshold MOS
- Title
- Swing and Phase-Noise Enhanced VCO With Capacitive-Division Dynamic-Threshold MOS
- Author
- 윤태열
- Keywords
- Dynamic threshold; G(m)-boosting; phase noise; swing; VCO
- Issue Date
- 2016-03
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Citation
- IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, v. 26, NO 3, Page. 219-221
- Abstract
- This letter presents a swing and phase-noise enhanced dynamic-threshold voltage controlled oscillator (VCO) using a capacitive division technique. This technique prevents forward biasing of the pn-junction between the body and source when the output swing increases, which results in low phase noise. The proposed VCO shows phase noise of -122.0 dBc/Hz at a 1MHz offset frequency at 2.31 GHz and a figure of merit of -192.7 dBc/Hz while consuming 0.46 mW from a 0.38-V supply voltage. It is implemented using a 0.11 mu m CMOS process with a chip area of 0.96 mm(2).
- URI
- http://ieeexplore.ieee.org/document/7412678/http://hdl.handle.net/20.500.11754/40564
- ISSN
- 1531-1309; 1558-1764
- DOI
- 10.1109/LMWC.2016.2526019
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
- Files in This Item:
There are no files associated with this item.
- Export
- RIS (EndNote)
- XLS (Excel)
- XML