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Organic-inorganic nanohybrid nonvolatile memory transistors for flexible electronics

Title
Organic-inorganic nanohybrid nonvolatile memory transistors for flexible electronics
Author
성명모
Keywords
FIELD-EFFECT TRANSISTORS; MONOLAYER-PRECISION; DEVICES; SEMICONDUCTORS; SUPERLATTICES; FABRICATION; VOLTAGE; SENSORS; FILM
Issue Date
2012-09
Publisher
Royal SOC Cemistry
Citation
Journal of Materials Chemistry, 2012, 22(36), P.19007-p19013, 7p
Abstract
We report on a low-temperature fabrication of organic-inorganic nanohybrid nonvolatile memory transistors using molecular layer deposition combined with atomic layer deposition. A 3 nm ZnO:Cu charge trap layer is sandwiched between 6 nm tunneling and 20 nm blocking self-assembled organic layers. First, we identify a large memory window of 14.1 V operated at +/- 15 V using metal-oxide-semiconductor capacitors. Second, we apply the capacitor structure to the nonvolatile memory transistors which operate in the low voltage range of -1 to 3 V. The writing/erasing (+8 V/-12 V) current ratio of similar to 10(3) of the memory transistors is maintained during the static and dynamic retention measurements. The reported organic-inorganic devices offer new opportunities to develop low-voltage-driven flexible memory electronics fabricated at low temperatures.
URI
http://pubs.rsc.org/en/Content/ArticleLanding/2012/JM/c2jm32767h#!divAbstract
ISSN
0959-9428
DOI
10.1039/c2jm32767h
Appears in Collections:
COLLEGE OF NATURAL SCIENCES[S](자연과학대학) > CHEMISTRY(화학과) > Articles
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