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Effects of irradiation conditions on the lateral grain growth during laser crystallization of amorphous silicon films on borosilicate glass substrates

Title
Effects of irradiation conditions on the lateral grain growth during laser crystallization of amorphous silicon films on borosilicate glass substrates
Author
문승재
Keywords
Glass Substrate; Thin Solid Film; Amorphous Silicon; Pulse Laser Energy; Plasma Enhance Chemical Vapor Deposition
Issue Date
2011-06
Publisher
SPRINGER, 233 SPRING ST, NEW YORK, NY 10013 USA
Citation
APPLIED PHYSICS A MATERIALS SCIENCE AND PROCESSING, Vol.104 No.3 [2011], 851-855
Abstract
The effects of preheating laser power and pulse laser energy on the size and crystallinity of laterally grown grains by dual-laser crystallization of amorphous silicon (a-Si) films on borosilicate glass substrates were investigated. Plasma-enhanced chemical vapor deposition was adopted for the deposition of the a-Si films in order to reduce the process temperature and thus the diffusion of metal impurities from the glass substrate to the deposited a-Si films. It was found that the preheating laser power is critical in enhancing grain size, whereas the pulse laser energy is closely related to crystal quality. It is demonstrated that by properly adjusting the process conditions, laterally grown grains of 50-mu m size could be obtained.
URI
http://eds.a.ebscohost.com/eds/detail/detail?vid=0&sid=acd24aa8-c77e-4133-b6e8-d9c355675030%40sessionmgr4010&bdata=Jmxhbmc9a28mc2l0ZT1lZHMtbGl2ZQ%3d%3d#AN=64312166&db=a9hhttp://hdl.handle.net/20.500.11754/37695
ISSN
0947-8396
DOI
10.1007/s00339-011-6425-x
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MECHANICAL ENGINEERING(기계공학부) > Articles
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