The influence of hafnium doping on bias stability in zinc oxide thin film transistors
- Title
- The influence of hafnium doping on bias stability in zinc oxide thin film transistors
- Author
- 박종완
- Keywords
- Thin film transistor (TFT); Oxide semiconductor; Hafnium zinc oxide (HZO); Negative bias temperature instability (NBTI); Positive bias temperature instability (PBTI)
- Issue Date
- 2011-05
- Publisher
- ELSEVIER SCIENCE SA, PO BOX 564, 1001 LAUSANNE, SWITZERLAND
- Citation
- Thin Solid Films,Vol.519 No.15 [2011],5161-5164
- Abstract
- We investigated the influence of hafnium doping on negative bias temperature instability (NBTI) and positive bias temperature instability (PBTI) in zinc oxide thin film transistors (TFTs). Hafnium zinc oxide (HZO) TFTs exhibited turn-on voltage (V ON ) shifts of 0V for negative stress bias and +3V for positive stress bias, compared with -5V and +9V, respectively, for ZnO TFTs. The enhanced improvement of the V ON shift may be due to a reduction in interface trap density resulting from the suppression of oxygen vacancy related defects caused by the high binding energy of Hf ions.
- URI
- http://www.sciencedirect.com/science/article/pii/S0040609011001106?via%3Dihub
- ISSN
- 0040-6090
- DOI
- 10.1016/j.tsf.2011.01.079
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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