Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 김은규 | - |
dc.date.accessioned | 2018-02-12T06:49:54Z | - |
dc.date.available | 2018-02-12T06:49:54Z | - |
dc.date.issued | 2011-06 | - |
dc.identifier.citation | Japanese Journal of Applied Physics,Vol.50 No.6 [2011],p06GF13 | en_US |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.uri | http://iopscience.iop.org/article/10.1143/JJAP.50.06GF13/meta | - |
dc.description.abstract | Nanocrystal-floating gate capacitors with WSi2 nanocrystals and high-k tunnel layers were fabricated to improve the electrical properties such as retention, programming/erasing speed, and endurance. The WSi2 nanocrystals were distributed uniformly between the tunnel and control gate oxide layers. The electrical performance of the tunnel barrier with the SiO2/HfO2/Al2O3 (2/1/3 nm) (OHA) tunnel layer appeared to be better than that with the Al2O3/HfO2/Al2O3 (2/1/3 nm) (AHA) tunnel layer. When Delta V-FB is about 1 V after applying voltage at +/- 8 V, the programming/erasing speeds of AHA and OHA tunnel layers are 300 ms and 500 mu s, respectively. In particular, the device with WSi2 nanocrystals and the OHA tunnel barrier showed a large memory window of about 7.76 V when the voltage swept from 10 to -10 V, and it was maintained at about 2.77 V after 10(4) cycles. (C) 2011 The Japan Society of Applied Physics | en_US |
dc.description.sponsorship | This work was supported in part by the National Program for 0.1 Terabit NVM Device by the Korean Government (MKE) and the Research fund of Hanyang University (HYU-2010-HYURS). D. U. Lee acknowledges to the NRF funded by the Korea Government (MEST, NRF-2010-355-C00021) | en_US |
dc.language.iso | en | en_US |
dc.publisher | JAPAN SOCIETY OF APPLIED PHYSICS | en_US |
dc.subject | MEMORY | en_US |
dc.subject | DIELECTRICS | en_US |
dc.title | Electrical Characteristics of WSi(2) Nanocrystal Capacitors with Barrier-Engineered High-k Tunnel Layers | en_US |
dc.type | Article | en_US |
dc.relation.volume | 50 | - |
dc.identifier.doi | 10.1143/JJAP.50.06GF13 | - |
dc.relation.page | - | - |
dc.relation.journal | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.contributor.googleauthor | Lee, Hyo Jun | - |
dc.contributor.googleauthor | Lee, Dong Uk | - |
dc.contributor.googleauthor | Kim, Eun Kyu | - |
dc.contributor.googleauthor | You, Hee-Wook | - |
dc.contributor.googleauthor | Cho, Won-Ju | - |
dc.relation.code | 2011217131 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF NATURAL SCIENCES[S] | - |
dc.sector.department | DEPARTMENT OF PHYSICS | - |
dc.identifier.pid | ek-kim | - |
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