Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 강보수 | - |
dc.date.accessioned | 2018-02-08T05:12:36Z | - |
dc.date.available | 2018-02-08T05:12:36Z | - |
dc.date.issued | 2015-06 | - |
dc.identifier.citation | APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, v. 119, No. 4, Page. 1437-1441 | en_US |
dc.identifier.issn | 0947-8396 | - |
dc.identifier.issn | 1432-0630 | - |
dc.identifier.uri | https://link.springer.com/article/10.1007/s00339-015-9117-0 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11754/36217 | - |
dc.description.abstract | A uniform epitaxial CoSi2 layer could be grown on a Si(100) substrate by deposition of a CoN (x) interlayer followed by an in situ annealing process. The amorphous Si-N layer which is formed at the CoN (x) /Si interface plays a role in inhibiting excessive Co incorporation into Si layer and consequently enhancing the epitaxial growth of CoSi2 layer. However, the Si-N layer also limits the growth of thick CoSi2 layer. Therefore, the thickness of the amorphous Si-N layer is an important factor for the epitaxial growth of the CoSi2 layer with uniform structure and low sheet resistance. | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | SPRINGER | en_US |
dc.subject | CHEMICAL-VAPOR-DEPOSITION | en_US |
dc.subject | OXIDE-MEDIATED EPITAXY | en_US |
dc.subject | REACTIVE DEPOSITION | en_US |
dc.subject | SI(100) SUBSTRATE | en_US |
dc.subject | SILICON | en_US |
dc.subject | COBALT | en_US |
dc.subject | SILICIDATION | en_US |
dc.subject | STABILITY | en_US |
dc.subject | SI(001) | en_US |
dc.subject | LAYER | en_US |
dc.title | Effects of NH3 flow rate on the epitaxial growth of CoSi2 thin film using a CoN (x) interlayer deposited by MOCVD | en_US |
dc.type | Article | en_US |
dc.relation.no | 4 | - |
dc.relation.volume | 119 | - |
dc.identifier.doi | 10.1007/s00339-015-9117-0 | - |
dc.relation.page | 1437-1441 | - |
dc.relation.journal | APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | - |
dc.contributor.googleauthor | Lee, SR | - |
dc.contributor.googleauthor | Ahn, BT | - |
dc.contributor.googleauthor | Kang, BS | - |
dc.relation.code | 2015001015 | - |
dc.sector.campus | E | - |
dc.sector.daehak | COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E] | - |
dc.sector.department | DEPARTMENT OF APPLIED PHYSICS | - |
dc.identifier.pid | bosookang | - |
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