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Issue DateTitleAuthor(s)
2005-10A measurement method of the resonantly enhanced gain spectrum and its effect on second harmonic generation in Vertical-External-Cavity Surface-Emitting Laser (VECSEL)심종인
2007-02A simple method for measurement of the alpha-factor in semiconductor Fabry-Perot lasers operating above threshold심종인
2007-043차원의 회로 모델링을 이용한 청색 GaN/InGaN LED의 전류 확산 효과에 관한 연구심종인
2007-08A new method for measurement of the fundamental device parameters in a GaN-based light emitting diode심종인
2008-05A method for current spreading analysis and electrode pattern design in light-emitting diodes심종인
2008-07Detuning Effects in an Electroabsorptin Modulator as a Transceiver for Picocell Radio-over-Fiber Application심종인
2009-05Enhancement of Light Extraction Efficiency Using Lozenge-Shaped GaN-Based Light-Emitting Diodes심종인
2009-06Theoretical Analysis on the Light Extraction Efficiency of GaN-Based Light-Emitting Diodes by Using the Ray Tracing Method심종인
2009-06Enhancing current spreading by simple electrode pattern design methodology in lateral GaN/InGaN LEDs심종인
2009-08Rate equation analysis of efficiency droop in InGaN light-emitting diodes심종인
2010-03Relationship between thermal and luminance distributions in high-power lateral GaN/InGaN light-emitting diodes심종인
2010-05Structural Parameter Dependence of Light Extraction Efficiency in Photonic Crystal InGaN Vertical Light-Emitting Diode Structures심종인
2010-06Analysis of the stress distribution in the nonuniformly bent GaN thin film grown on a sapphire substrate심종인
2010-07Effect of temperature distribution and current crowding on the performance of lateral GaN-based light-emitting diodes심종인
2010-07Strain relaxation effect on electronic properties of compressively strained InGaAs/InP vertically stacked multiple quantum wires심종인
2010-11Analysis of Time-resolved Photoluminescence of InGaN Quantum Wells Using the Carrier Rate Equation심종인
2011-02Antimony Surfactant Effect on Green Emission InGaN/GaN Multi Quantum Wells Grown by MOCVD심종인
2011-02Investigation of the Carrier Distribution Characteristics in InGaN Multiple Quantum Wells by Using Dual-wavelength Light-emitting Diodes심종인
2011-03Inhomogeneous carrier distribution in InGaN multiple quantum wells and its influences on device performances심종인
2011-04An Explanation of Efficiency Droop in InGaN-based Light Emitting Diodes: Saturated Radiative Recombination Rate at Randomly Distributed In-Rich Active Areas심종인

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