Capacitance Transient Analysis of Different-Sized InAs/GaAs Quantum Dot Structures
- Title
- Capacitance Transient Analysis of Different-Sized InAs/GaAs Quantum Dot Structures
- Author
- 김은규
- Keywords
- Quantum Dots; Energy States; InAs/GaAs; Selective Carrier Injection; Capacitance Transient Spectroscopy
- Issue Date
- 2011-07
- Publisher
- AMER SCIENTIFIC PUBLISHERS, 26650 THE OLD RD, STE 208, VALENCIA, CA 91381-0751 USA
- Citation
- Journal of nanoscience and nanotechnology,Vol.11 No.7 [2011],6504-6509
- Abstract
- The energy states of InAs/GaAs self-assembled quantum dots (QDs) were analyzed by comparing between two QD systems with different QD sizes. The electrical properties of the QD systems were investigated via capacitance-voltage measurements and capacitance transient spectroscopy (also known as deep-level transient spectroscopy) with selective carrier injection and extraction which can be achieved with very small pulse amplitude under bias variation. For the large QDs, several energy states were found with the use of selective carrier injection and extraction. The thermal-activation energies obtained from the capacitance transient spectra of the large QDs were distributed from 70 to 600 meV. This energy distribution was originated from the quantized states of the individual QDs and the size distribution of the QDs. The spectra of the small QDs showed a well-defined energy state of E(c) - 132 meV. From these results, it was estimated that two to four electrons fill a single QD under the proper measurement bias of 0.2 V pulse.
- URI
- http://www.ingentaconnect.com/content/asp/jnn/2011/00000011/00000007/art00170
- ISSN
- 1533-4880
- DOI
- 10.1166/jnn.2011.4322
- Appears in Collections:
- COLLEGE OF NATURAL SCIENCES[S](자연과학대학) > PHYSICS(물리학과) > Articles
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