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Microstructural characteristics of AlN thin layers grown on Si(110) substrates by molecular beam epitaxy: Transmission electron microscopy study

Title
Microstructural characteristics of AlN thin layers grown on Si(110) substrates by molecular beam epitaxy: Transmission electron microscopy study
Author
오재응
Keywords
Aluminum nitride (AlN); Si(110); Transmission electron microscopy (TEM); Atomic structure; Dislocation; VAPOR-PHASE EPITAXY; GROUP-III NITRIDES; GAN; SILICON; SI
Issue Date
2015-02
Publisher
ELSEVIER SCIENCE SA
Citation
THIN SOLID FILMS, v. 576, Page. 61-67
Abstract
The microstructural properties of an aluminum nitride (AlN) layer grown on a silicon (Si(110)) substrate were studied in detail using transmission electron microscope techniques to determine atomic structure and dislocation behavior. AlN islands elongated along the [11 (2) over bar0](AlN)//[(1) over bar 10] Si direction were observed at the initial growth stage on the Si(110) substrate. The threading dislocations with a Burgers vector vertical to the interface, most probably b(e) = [0001] of the wurtzite structure, were frequently observed in the AlN thin film. Due to anisotropic biaxial strain distributions, two different atomic structure behaviors were observed along the two in-plane directions; a coherent interfacewas observed along the [11 (2) over bar0](AlN)//[(1) over bar 10] Si direction and a semicoherent interface, including periodic extra-half planes, was observed along the [(1) over bar 100](AlN)//[001] Si direction. The extra-half planes were observed at approximately two monolayers above the interface, and not at the exact interface. (C) 2015 Elsevier B.V. All rights reserved.
URI
http://www.sciencedirect.com/science/article/pii/S0040609015000188http://hdl.handle.net/20.500.11754/35595
ISSN
0040-6090
DOI
10.1016/j.tsf.2015.01.008
Appears in Collections:
COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > ELECTRICAL ENGINEERING(전자공학부) > Articles
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