Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 김은규 | - |
dc.date.accessioned | 2018-02-03T06:23:01Z | - |
dc.date.available | 2018-02-03T06:23:01Z | - |
dc.date.issued | 2011-03 | - |
dc.identifier.citation | APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, v. 102, NO 4, Page. 933-938 | en_US |
dc.identifier.issn | 0947-8396 | - |
dc.identifier.uri | http://link.springer.com/article/10.1007%2Fs00339-011-6275-6 | - |
dc.description.abstract | A memory device with In2O3 nanocrystals embedded in a biphenyl-tertracarboxylic dianhydride-phenylen diamine (BPDA-PDA) polyimide layer on a ZnO layer was fabricated, and its electrical properties were evaluated. Then, the transmittance efficiency in the structure of the BPDA-PDA polyimide/In2O3 nanocrystals/ZnO/ITO/double polishing sapphire substrate was measured to be about 80% between 440 to 800 nm by ultraviolet-visible transmittance spectroscopy. A bipolar switching current bistability by difference resistance appeared in the sweep voltage rage from -7 to 7 V. It was considered that the bipolar behavior of current-voltage may originate from a resistance fluctuation because of the electron charging effect in In2O3 nanocrystals by voltage sweeping, Fowler-Nordheim tunneling, space-charge-limited current, and the migration of O2- ions. | en_US |
dc.language.iso | en | en_US |
dc.publisher | SPRINGER | en_US |
dc.subject | FILMSThis work was supported in part by the National Program for 0.1 Terabit Non-Volatile Memory Devices by the Ministry of Knowledge Economy and the Mid-career Researcher Program through the National Research Foundation funded by the Ministry of Education, Science and Technology (Grant No. 2010-0014498), and the Research fund of Hanyang University (HYU-2010-HYURS). D. U. Lee acknowledges to the NRF funded by the Korea Government (MEST) (NRF-2010-355-C00021). | en_US |
dc.title | Resistance switching properties of In2O3 nanocrystals memory device with organic and inorganic hybrid structure | en_US |
dc.type | Article | en_US |
dc.relation.no | 4 | - |
dc.relation.volume | 102 | - |
dc.identifier.doi | 10.1007/s00339-011-6275-6 | - |
dc.relation.page | 933-938 | - |
dc.relation.journal | APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | - |
dc.contributor.googleauthor | Lee, D. U. | - |
dc.contributor.googleauthor | Kim, E. K. | - |
dc.contributor.googleauthor | Cho, W. J. | - |
dc.contributor.googleauthor | Kim, Y. H. | - |
dc.relation.code | 2011200864 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF NATURAL SCIENCES[S] | - |
dc.sector.department | DEPARTMENT OF PHYSICS | - |
dc.identifier.pid | ek-kim | - |
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