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High performance n-type organic-inorganic nanohybrid semiconductors for flexible electronic devices

Title
High performance n-type organic-inorganic nanohybrid semiconductors for flexible electronic devices
Author
성명모
Keywords
Organic-inorganic nanohybrid semiconductors; Molecular layer deposition; Atomic layer deposition; ZnO; Organic thin film transistors
Issue Date
2011-02
Publisher
ELSEVIER SCIENCE BV
Citation
ORGANIC ELECTRONICS, v. 12, NO 2, Page. 348-352
Abstract
We report a high-performance and air-stable flexible and invisible semiconductor which can be substitute for the n-type organic semiconductors. N-type organic-inorganic nanohybrid superlattices were developed for active semiconducting channel layers of thin film transistors at low temperature of 150 degrees C by using molecular layer deposition with atomic layer deposition. In these nanohybrid superlattices, self-assembled organic layers (SAOLs) offer structural flexibility, whereas ZnO inorganic layers provide the potential for semiconducting properties, and thermal and mechanical stability. The prepared SAOLs-ZnO nanohybrid thin films exhibited good thermal and mechanical stability, good flexibility, transparent in the visible range, and excellent field effect mobility (>7cm(2)/V s) under low voltage operation (from -1 to 3 V). The nanohybrid semiconductor is also compatible with pentacene in p-n junction diodes. (C) 2010 Elsevier B.V. All rights reserved.
URI
http://www.sciencedirect.com/science/article/pii/S1566119910003848?_rdoc=1&_fmt=high&_origin=gateway&_docanchor=&md5=b8429449ccfc9c30159a5f9aeaa92ffb
ISSN
1566-1199
DOI
10.1016/j.orgel.2010.11.026
Appears in Collections:
COLLEGE OF NATURAL SCIENCES[S](자연과학대학) > CHEMISTRY(화학과) > Articles
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