Controlled Growth of Rubrene Nanowires by Eutectic Melt Crystallization
- Title
- Controlled Growth of Rubrene Nanowires by Eutectic Melt Crystallization
- Author
- 이상욱
- Keywords
- FIELD-EFFECT TRANSISTORS; HABIT CONTROLLING FACTOR; ATTACHMENT ENERGY; POLYMER NANOWIRE; SINGLE-CRYSTALS; THIN-FILM; SOLVENTS; ORIENTATION; TEMPERATURE; EPITAXY
- Issue Date
- 2016-03
- Publisher
- NATURE PUBLISHING GROUP
- Citation
- SCIENTIFIC REPORTS, v. 6, Article number 23108, Page. 23108-23118
- Abstract
- Organic semiconductors including rubrene, Alq(3), copper phthalocyanine and pentacene are crystallized by the eutectic melt crystallization. Those organic semiconductors form good eutectic systems with the various volatile crystallizable additives such as benzoic acid, salicylic acid, naphthalene and 1,3,5-trichlorobenzene. Due to the formation of the eutectic system, organic semiconductors having originally high melting point (T-m ˃ 300 degrees C) are melted and crystallized at low temperature (T-e = 40.8-133 degrees C). The volatile crystallizable additives are easily removed by sublimation. For a model system using rubrene, single crystalline rubrene nanowires are prepared by the eutectic melt crystallization and the eutectic-melt-assisted nanoimpinting (EMAN) technique. It is demonstrated that crystal structure and the growth direction of rubrene can be controlled by using different volatile crystallizable additives. The field effect mobility of rubrene nanowires prepared using several different crystallizable additives are measured and compared.
- URI
- https://www.nature.com/articles/srep23108http://hdl.handle.net/20.500.11754/35022
- ISSN
- 2045-2322
- DOI
- 10.1038/srep23108
- Appears in Collections:
- GRADUATE SCHOOL[S](대학원) > BIONANOTECHNOLOGY(바이오나노학과) > Articles
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