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dc.contributor.author강영종-
dc.date.accessioned2018-01-25T07:41:59Z-
dc.date.available2018-01-25T07:41:59Z-
dc.date.issued2016-03-
dc.identifier.citationJOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v. 16, NO 3, Page. 2715-2718en_US
dc.identifier.issn1533-4880-
dc.identifier.issn1533-4899-
dc.identifier.urihttp://www.ingentaconnect.com/content/asp/jnn/2016/00000016/00000003/art00088-
dc.identifier.urihttp://hdl.handle.net/20.500.11754/34390-
dc.description.abstractHetero-nanorods consisting of two charge-transfer (CT) complexes were fabricated by the strained melt-molding lithography. Utilizing the lowered melting temperature by the formation of eutectic mixture, various well-defined CT complex nanorods can be easily fabricated by soft-lithographyassisted melt crystallization below 100 degrees C. Hetero-nanorods were fabricated by selective doping of the secondary CT complex at defects induced by applying the uniaxial strain.en_US
dc.language.isoenen_US
dc.publisherAMER SCIENTIFIC PUBLISHERSen_US
dc.subjectHeterogeneous Nanorodsen_US
dc.subjectCharge-Transfer Complexen_US
dc.subjectSelective Dopingen_US
dc.titleHeterogeneous Charge-Transfer Nanorods by Strained Melt-Molding Lithographyen_US
dc.typeArticleen_US
dc.relation.no3-
dc.relation.volume16-
dc.identifier.doi10.1166/jnn.2016.11100-
dc.relation.page2715-2718-
dc.relation.journalJOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY-
dc.contributor.googleauthorKim, Jueun-
dc.contributor.googleauthorChung, Jeyon-
dc.contributor.googleauthorHyon, Jinho-
dc.contributor.googleauthorSeo, Chunhee-
dc.contributor.googleauthorNam, Jihye-
dc.contributor.googleauthorKang, Youngjong-
dc.relation.code2016003411-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF NATURAL SCIENCES[S]-
dc.sector.departmentDEPARTMENT OF CHEMISTRY-
dc.identifier.pidyoungjkang-
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COLLEGE OF NATURAL SCIENCES[S](자연과학대학) > CHEMISTRY(화학과) > Articles
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