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Electronic structure and photoluminescence properties of Zn-ion implanted silica glass before and after thermal annealing

Title
Electronic structure and photoluminescence properties of Zn-ion implanted silica glass before and after thermal annealing
Author
Bukhvalov, Danil
Keywords
Phase transition; Spectroscopy; DFT modeling; Doping
Issue Date
2016-02
Publisher
ELSEVIER SCIENCE BV
Citation
JOURNAL OF NON-CRYSTALLINE SOLIDS, v. 432, Page. 183-188
Abstract
The results of XPS core-level and valence band measurements, photoluminescence spectra of a-SiO2 implanted by Zn-ions (E = 30 key, D = 1 . 10(17) cm(-2)) and Density Functional Theory calculations of electronic structure as well as formation energies of structural defects in silica glass induced by Zn-ion implantation are presented. Both theory and experiment show that it is energetically more favorable for implanted zinc ions to occupy the interstitial positions instead of cation substitution. As a result, the Zn-ions embedded to interstitials, form chemical bonds with the surrounding oxygen atoms, fabrication ZnO-like nanoparticles and oxygen-deficient SiOx matrix. The subsequent thermal annealing at 900 degrees C (1 h) strongly reduces the amount of ZnO nanoparticles and induces the formation of secondary alpha-Zn2SiO4 phase which markedly enhances the green emission. (C) 2015 Published by Elsevier B.V.
URI
http://www.sciencedirect.com/science/article/pii/S0022309315302064?via%3Dihubhttp://hdl.handle.net/20.500.11754/31903
ISSN
0022-3093; 1873-4812
DOI
10.1016/j.jnoncrysol.2015.10.002
Appears in Collections:
COLLEGE OF NATURAL SCIENCES[S](자연과학대학) > CHEMISTRY(화학과) > Articles
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