141 0

Transport property improvements of amorphous In-Zn-O transistors with printed Cu contacts via rapid temperature annealing

Title
Transport property improvements of amorphous In-Zn-O transistors with printed Cu contacts via rapid temperature annealing
Author
정재경
Keywords
Printed contacts; Copper; Rapid temperature annealing; Indium-zinc-oxide; Semiconductor; Tantalum; Diffusion barrier; Thin-film transistors
Issue Date
2016-02
Publisher
ELSEVIER SCIENCE SA
Citation
THIN SOLID FILMS, v. 603, Page. 268-271
Abstract
The device performance of amorphous In-Zn-O (a-IZO) thin-film transistors (TFTs) with printed Cu contacts was significantly improved by the insertion of a diffusion barrier Ta layer and rapid thermal process (RTP) annealing. Furnace-annealed a-IZO TFTs with Cu/Ta contacts exhibited mobility values of 21.3 cm(2)/Vs, subthreshold gate swing (SS) values of 1.9 V/decade, and I-ON/OFF of similar to 10(6). In contrast, the SS, mobility, and I-ON/OFF ratio of RTP-annealed a-IZO TFTs with Cu/Ta contacts were 30.6 cm(2)/Vs, 0.68 V/decade, and 3 x 10(7), respectively. We attributed the performance improvement of devices with Cu/Ta contacts to the suppression of Cu in-diffusion within the a-IZO channel due to the rapid heating associated with RTP annealing. (C) 2016 Elsevier B.V. All rights reserved.
URI
http://www.sciencedirect.com/science/article/pii/S0040609016001309?via%3Dihubhttp://hdl.handle.net/20.500.11754/31889
ISSN
0040-6090
DOI
10.1016/j.tsf.2016.02.032
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE