Transport property improvements of amorphous In-Zn-O transistors with printed Cu contacts via rapid temperature annealing
- Title
- Transport property improvements of amorphous In-Zn-O transistors with printed Cu contacts via rapid temperature annealing
- Author
- 정재경
- Keywords
- Printed contacts; Copper; Rapid temperature annealing; Indium-zinc-oxide; Semiconductor; Tantalum; Diffusion barrier; Thin-film transistors
- Issue Date
- 2016-02
- Publisher
- ELSEVIER SCIENCE SA
- Citation
- THIN SOLID FILMS, v. 603, Page. 268-271
- Abstract
- The device performance of amorphous In-Zn-O (a-IZO) thin-film transistors (TFTs) with printed Cu contacts was significantly improved by the insertion of a diffusion barrier Ta layer and rapid thermal process (RTP) annealing. Furnace-annealed a-IZO TFTs with Cu/Ta contacts exhibited mobility values of 21.3 cm(2)/Vs, subthreshold gate swing (SS) values of 1.9 V/decade, and I-ON/OFF of similar to 10(6). In contrast, the SS, mobility, and I-ON/OFF ratio of RTP-annealed a-IZO TFTs with Cu/Ta contacts were 30.6 cm(2)/Vs, 0.68 V/decade, and 3 x 10(7), respectively. We attributed the performance improvement of devices with Cu/Ta contacts to the suppression of Cu in-diffusion within the a-IZO channel due to the rapid heating associated with RTP annealing. (C) 2016 Elsevier B.V. All rights reserved.
- URI
- http://www.sciencedirect.com/science/article/pii/S0040609016001309?via%3Dihubhttp://hdl.handle.net/20.500.11754/31889
- ISSN
- 0040-6090
- DOI
- 10.1016/j.tsf.2016.02.032
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
- Files in This Item:
There are no files associated with this item.
- Export
- RIS (EndNote)
- XLS (Excel)
- XML