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dc.contributor.author박진성-
dc.date.accessioned2017-11-27T05:31:36Z-
dc.date.available2017-11-27T05:31:36Z-
dc.date.issued2016-02-
dc.identifier.citationJOURNAL OF ELECTROCERAMICS, v. 36, Page. 165-169en_US
dc.identifier.issn1385-3449-
dc.identifier.issn1573-8663-
dc.identifier.urihttps://link.springer.com/article/10.1007/s10832-016-0015-4-
dc.identifier.urihttp://hdl.handle.net/20.500.11754/31871-
dc.description.abstractPlasma-enhanced atomic layer deposition (PEALD) of tantalum nitride (TaN) thin films was investigated at a growth temperature of 230 °C using an alternating supply of tertiary-amylimido-tris(dimethylamido)tantalum (TAIMATA, Ta[NC(CH3)2C2H5][N(CH3)2]3) and hydrogen (H2) plasma. As the H2 plasma power increased from 75 to 175 W, the electrical resistivity of the films was improved from 1900 to 680 μΩ·cm, mainly due to the improved crystallinity. Moreover, the preferred orientation ratio between TaN (200) and TaN (111) planes also abruptly increased from 0.8 to 2.8 with increasing the H2 plasma power. This preferred orientation change of the films from (111) to (200) improves the adhesion properties between Cu and TaN, while the Cu diffusion barrier performance was not significantly affected.en_US
dc.description.sponsorshipThis research was supported by the Global Frontier R&D Program (2013M3A6B1078874) on Center for Hybrid Interface Materials (HIM) funded by the Ministry of Science, ICT & Future Planning.en_US
dc.language.isoenen_US
dc.publisherSPRINGERen_US
dc.subjectTantalum nitride thin filmsen_US
dc.subjectPlasma-enhanced atomic layer depositionen_US
dc.subjectPreferred orientationen_US
dc.subjectMicrostructureen_US
dc.subjectCopper diffusion barrieren_US
dc.titlePlasma-enhanced atomic layer deposition of tantalum nitridethin films using tertiary-amylimido-tris(dimethylamido)tantalum and hydrogen plasmaen_US
dc.typeArticleen_US
dc.relation.volume35-
dc.identifier.doi10.1007/s10832-016-0015-4-
dc.relation.page165-169-
dc.relation.journalJOURNAL OF ELECTROCERAMICS-
dc.contributor.googleauthorLee, Ha-Jin-
dc.contributor.googleauthorPark, Jin-Seong-
dc.contributor.googleauthorKwon, Se-Hun-
dc.relation.code2016000804-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentDIVISION OF MATERIALS SCIENCE AND ENGINEERING-
dc.identifier.pidjsparklime-
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COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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