175 0

A non-destructive n-doping method for graphene with precise control of electronic properties via atomic layer deposition

Title
A non-destructive n-doping method for graphene with precise control of electronic properties via atomic layer deposition
Author
이용은
Keywords
FIELD-EFFECT TRANSISTORS; SELF-ASSEMBLED MONOLAYERS; CVD-GROWN GRAPHENE; EPITAXIAL GRAPHENE; AIR-STABILITY; DIRAC POINT; PERFORMANCE; MOBILITY; BINDING; FILMS
Issue Date
2016-02
Publisher
ROYAL SOC CHEMISTRY
Citation
NANOSCALE, v. 8, NO 9, Page. 5000-5005
Abstract
Graphene applications require high precision control of the Fermi level and carrier concentration via a nondestructive doping method. Here, we develop an effective n-doping technique using atomic layer deposition (ALD) of ZnO thin films on graphene through a reactive molecular layer. This ALD doping method is nondestructive, simple, and precise. The ZnO thin films on graphene are uniform, conformal, of good quality with a low density of pinholes, and finely tunable in thickness with 1 angstrom resolution. We demonstrate graphene transistor control in terms of the Dirac point, carrier density, and doping state as a function of the ZnO thickness. Moreover, ZnO functions as an effective thin-film barrier against air-borne water and oxygen on the graphene, resulting in extraordinary stability in air for graphene devices. ZnO ALD was also applied to other two-dimensional materials including MoS2 and WSe2, which substantially enhanced electron mobility.
URI
http://pubs.rsc.org/en/Content/ArticleLanding/2016/NR/C5NR08016A#!divAbstracthttp://hdl.handle.net/20.500.11754/31822
ISSN
2040-3364; 2040-3372
DOI
10.1039/c5nr08016a
Appears in Collections:
RESEARCH INSTITUTE[S](부설연구소) > ETC
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE