Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 성명모 | - |
dc.date.accessioned | 2017-11-23T06:14:33Z | - |
dc.date.available | 2017-11-23T06:14:33Z | - |
dc.date.issued | 2016-02 | - |
dc.identifier.citation | NANOSCALE, v. 8, NO 9, Page. 5000-5005 | en_US |
dc.identifier.issn | 2040-3364 | - |
dc.identifier.issn | 2040-3372 | - |
dc.identifier.uri | http://pubs.rsc.org/en/Content/ArticleLanding/2016/NR/C5NR08016A#!divAbstract | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11754/31811 | - |
dc.description.abstract | Graphene applications require high precision control of the Fermi level and carrier concentration via a nondestructive doping method. Here, we develop an effective n-doping technique using atomic layer deposition (ALD) of ZnO thin films on graphene through a reactive molecular layer. This ALD doping method is nondestructive, simple, and precise. The ZnO thin films on graphene are uniform, conformal, of good quality with a low density of pinholes, and finely tunable in thickness with 1 angstrom resolution. We demonstrate graphene transistor control in terms of the Dirac point, carrier density, and doping state as a function of the ZnO thickness. Moreover, ZnO functions as an effective thin-film barrier against air-borne water and oxygen on the graphene, resulting in extraordinary stability in air for graphene devices. ZnO ALD was also applied to other two-dimensional materials including MoS2 and WSe2, which substantially enhanced electron mobility. | en_US |
dc.description.sponsorship | This work was supported by the National Research Foundation (NRF) of Korea grant funded by the Korea government (MSIP) (no. 2014R1A2A1A10050257), and the Global Frontier R&D Program on the Center for Multiscale Energy System (no. 2012M3A6A7054855), and the NanoMaterial Technology Development Program (no. 2012M3A7B4034985), and the Creative Materials Discovery Program on Creative Multilevel Research Center (2015M3D1A1068061) through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT & Future Planning, and by the Samsung Research Funding Center of Samsung Electronics under Project Number SRFC-MA1401-05. | en_US |
dc.language.iso | en | en_US |
dc.publisher | ROYAL SOC CHEMISTRY | en_US |
dc.subject | FIELD-EFFECT TRANSISTORS | en_US |
dc.subject | SELF-ASSEMBLED MONOLAYERS | en_US |
dc.subject | CVD-GROWN GRAPHENE | en_US |
dc.subject | EPITAXIAL GRAPHENE | en_US |
dc.subject | AIR-STABILITY | en_US |
dc.subject | DIRAC POINT | en_US |
dc.subject | PERFORMANCE | en_US |
dc.subject | MOBILITY | en_US |
dc.subject | BINDING | en_US |
dc.subject | FILMS | en_US |
dc.title | A non-destructive n-doping method for graphene with precise control of electronic properties via atomic layer deposition | en_US |
dc.type | Article | en_US |
dc.relation.no | 9 | - |
dc.relation.volume | 8 | - |
dc.identifier.doi | 10.1039/c5nr08016a | - |
dc.relation.page | 5000-5005 | - |
dc.relation.journal | NANOSCALE | - |
dc.contributor.googleauthor | Han, Kyu Seok | - |
dc.contributor.googleauthor | Kalode, Pranav Y. | - |
dc.contributor.googleauthor | Lee, Yong-Eun Koo | - |
dc.contributor.googleauthor | Kim, Hongbum | - |
dc.contributor.googleauthor | Lee, Lynn | - |
dc.contributor.googleauthor | Sung, Myung Mo | - |
dc.relation.code | 2016000163 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF NATURAL SCIENCES[S] | - |
dc.sector.department | DEPARTMENT OF CHEMISTRY | - |
dc.identifier.pid | smm | - |
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