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dc.contributor.author성명모-
dc.date.accessioned2017-11-23T06:14:33Z-
dc.date.available2017-11-23T06:14:33Z-
dc.date.issued2016-02-
dc.identifier.citationNANOSCALE, v. 8, NO 9, Page. 5000-5005en_US
dc.identifier.issn2040-3364-
dc.identifier.issn2040-3372-
dc.identifier.urihttp://pubs.rsc.org/en/Content/ArticleLanding/2016/NR/C5NR08016A#!divAbstract-
dc.identifier.urihttp://hdl.handle.net/20.500.11754/31811-
dc.description.abstractGraphene applications require high precision control of the Fermi level and carrier concentration via a nondestructive doping method. Here, we develop an effective n-doping technique using atomic layer deposition (ALD) of ZnO thin films on graphene through a reactive molecular layer. This ALD doping method is nondestructive, simple, and precise. The ZnO thin films on graphene are uniform, conformal, of good quality with a low density of pinholes, and finely tunable in thickness with 1 angstrom resolution. We demonstrate graphene transistor control in terms of the Dirac point, carrier density, and doping state as a function of the ZnO thickness. Moreover, ZnO functions as an effective thin-film barrier against air-borne water and oxygen on the graphene, resulting in extraordinary stability in air for graphene devices. ZnO ALD was also applied to other two-dimensional materials including MoS2 and WSe2, which substantially enhanced electron mobility.en_US
dc.description.sponsorshipThis work was supported by the National Research Foundation (NRF) of Korea grant funded by the Korea government (MSIP) (no. 2014R1A2A1A10050257), and the Global Frontier R&D Program on the Center for Multiscale Energy System (no. 2012M3A6A7054855), and the NanoMaterial Technology Development Program (no. 2012M3A7B4034985), and the Creative Materials Discovery Program on Creative Multilevel Research Center (2015M3D1A1068061) through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT & Future Planning, and by the Samsung Research Funding Center of Samsung Electronics under Project Number SRFC-MA1401-05.en_US
dc.language.isoenen_US
dc.publisherROYAL SOC CHEMISTRYen_US
dc.subjectFIELD-EFFECT TRANSISTORSen_US
dc.subjectSELF-ASSEMBLED MONOLAYERSen_US
dc.subjectCVD-GROWN GRAPHENEen_US
dc.subjectEPITAXIAL GRAPHENEen_US
dc.subjectAIR-STABILITYen_US
dc.subjectDIRAC POINTen_US
dc.subjectPERFORMANCEen_US
dc.subjectMOBILITYen_US
dc.subjectBINDINGen_US
dc.subjectFILMSen_US
dc.titleA non-destructive n-doping method for graphene with precise control of electronic properties via atomic layer depositionen_US
dc.typeArticleen_US
dc.relation.no9-
dc.relation.volume8-
dc.identifier.doi10.1039/c5nr08016a-
dc.relation.page5000-5005-
dc.relation.journalNANOSCALE-
dc.contributor.googleauthorHan, Kyu Seok-
dc.contributor.googleauthorKalode, Pranav Y.-
dc.contributor.googleauthorLee, Yong-Eun Koo-
dc.contributor.googleauthorKim, Hongbum-
dc.contributor.googleauthorLee, Lynn-
dc.contributor.googleauthorSung, Myung Mo-
dc.relation.code2016000163-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF NATURAL SCIENCES[S]-
dc.sector.departmentDEPARTMENT OF CHEMISTRY-
dc.identifier.pidsmm-
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COLLEGE OF NATURAL SCIENCES[S](자연과학대학) > CHEMISTRY(화학과) > Articles
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