181 0

Degradation Characteristics of MgO Based Magnetic Tunnel Junction Caused by Surface Roughness of Ta/Ru Buffer Layers

Title
Degradation Characteristics of MgO Based Magnetic Tunnel Junction Caused by Surface Roughness of Ta/Ru Buffer Layers
Author
송윤흡
Keywords
Magnetic Tunnel Junction; MgO; Degradation; Breakdown; Buffer Layer; Surface Roughness
Issue Date
2016-01
Publisher
AMER SCIENTIFIC PUBLISHERS
Citation
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v. 16, NO 1, Page. 654-657
Abstract
We investigated how surface roughness of a Ta/Ru buffer layer affects the degradation characteristics on MgO-based magnetic tunnel junctions (MTJs). MTJs with worse surface roughness on the buffer layer showed increased resistance drift and degraded time-dependent dielectric breakdown (TDDB) characteristics. We suggest that this resulted from reduced MgO thickness on the MTJ with worse surface roughness on the buffer layer, which was estimated by the TDDB and analytic approach. As a result, surface roughness of the buffer layer is a critical factors that impacts the reliability of MTJs, and it should be controlled to have the smallest roughness value as possible.
URI
http://www.ingentaconnect.com/content/asp/jnn/2016/00000016/00000001/art00074;jsessionid=2j15sgo4q48bx.x-ic-live-02http://hdl.handle.net/20.500.11754/31695
ISSN
1533-4880; 1533-4899
DOI
10.1166/jnn.2016.11901
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE