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Issue DateTitleAuthor(s)
2020-02Weldability of austenitic Fe-Mn-Al-C lightweight steels김봉윤
2020-02Characteristics of energy storage and conversion of surface-modified nanostructure: ab-initio study우정욱
2020-02Design strategies of sulfide based solid electrolyte박찬휘
2020-02Engineering of graphene properties via nanostructure and edge-defect design김수한
2020-02Atomic Layer Deposited p-type Oxide Semiconductor Thin Films : Fundamental, Process and Thin Film Transistor이정훈
2020-02Analysis of oxygen vacancies in Ru/ZnO Schottky contacts for a MOM selector and its application for 1R1S structure이태훈
2020-02Approach to In-Ga-Zn-O Thin-Film Transistor via Atomic Layer Deposition: Properties, Processes and Precursors Characteristics성가진
2019유한요소해석을 이용한 저온 분사된 서멧 입자들의 적층 관련 특징 분석Jaeick Kim
2019Transient Liquid Phase Bonding behavior of Duplex Stainless Steel UNS S32750 Using Fe-B-Si Insert MetalSungjoo Roh
2019-02정전슬러리분무증착법을 이용한 메타필름의 미세구조 제어와 이의 응용이세욱
2019-02Tunnel Field Effect Transistor with High-K/Metal Gate Stack and Band Gap EngineeringDonghwan Lim
2019-02Thin Film Encapsulation of Aluminum Oxide by Ozone-based Atomic Layer DepositionSeokyoon Shin
2019-02The study on the characteristics of low temperature silicon nitride thin film for gate spacer using remote plasma atomic layer depositionWoochool Jang
2019-02Impact and electromigration reliabilities of Pb-free joints formed on eco-friendly Cu-Zn wetting layerJae-Yong Park
2019-02Fan-out electronic packaging technology utilizing flip-chip self-alignmentHwan Pil PARK
2019-02Behavior of the sigma phase in Mn containing superaustenitic stainless steel weld metalsChangmin Lee
2019-02Atomic-scale simulation study on surface-dependent structural, electronic and chemical properties of nanostructuresMinyeong Je
2019-02A study on improvement of transmittance through optimization of Y2O3 transparent ceramic microstructure using a spark plasma sinteringCheol Woo Park
2019-02A study on growth of bulk GaN single crystal by HVPE and improvement of GaN wafer yieldJae Hwa Park
2018-08New application of deep-UV irradiation for amorphous InGaZnO (a-IGZO) based transistor and diodeMyeong-Ho Kim

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