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Low-resistance gateless high electron mobility transistors using three-dimensional inverted pyramidal AlGaN/GaN surfaces

Title
Low-resistance gateless high electron mobility transistors using three-dimensional inverted pyramidal AlGaN/GaN surfaces
Author
소홍윤
Keywords
MOLECULAR-BEAM EPITAXY; PIEZOELECTRIC POLARIZATION; ALN INTERLAYERS; POWER-DENSITY; HEMTS; HETEROSTRUCTURES; SILICON; SI(111); GAN; SI
Issue Date
2016-01
Publisher
AMER INST PHYSICS
Citation
APPLIED PHYSICS LETTERS, v. 108, NO 1, Article number 012104
Abstract
In this letter, three-dimensional gateless AlGaN/GaN high electron mobility transistors (HEMTs) were demonstrated with 54% reduction in electrical resistance and 73% increase in surface area compared with conventional gateless HEMTs on planar substrates. Inverted pyramidal AlGaN/GaN surfaces were microfabricated using potassium hydroxide etched silicon with exposed (111) surfaces and metal-organic chemical vapor deposition of coherent AlGaN/GaN thin films. In addition, electrical characterization of the devices showed that a combination of series and parallel connections of the highly conductive two-dimensional electron gas along the pyramidal geometry resulted in a significant reduction in electrical resistance at both room and high temperatures (up to 300 degrees C). This three-dimensional HEMT architecture can be leveraged to realize low-power and reliable power electronics, as well as harsh environment sensors with increased surface area. (C) 2016 AIP Publishing LLC.
URI
http://aip.scitation.org/doi/10.1063/1.4939509http://hdl.handle.net/20.500.11754/30643
ISSN
0003-6951; 1077-3118
DOI
10.1063/1.4939509
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MECHANICAL ENGINEERING(기계공학부) > Articles
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