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Intense pulsed light induced crystallization of a liquid-crystalline polymer semiconductor for efficient production of flexible thin-film transistors

Title
Intense pulsed light induced crystallization of a liquid-crystalline polymer semiconductor for efficient production of flexible thin-film transistors
Author
김도환
Keywords
FIELD-EFFECT TRANSISTORS; SOLAR-CELLS; OXIDE; COPOLYMERS; DEPOSITION; SUBSTRATE; INK
Issue Date
2016-01
Publisher
ROYAL SOC CHEMISTRY
Citation
PHYSICAL CHEMISTRY CHEMICAL PHYSICS, v. 18, NO 6, Page. 4627-4634
Abstract
Here we demonstrated the split-second crystallization of a liquid-crystalline conjugated polymer semiconductor induced by irradiation with intense pulsed white light (IPWL) for the efficient improvement of electrical properties of flexible thin film transistors. A few seconds of IPWL irradiation of poly(didodecylquaterthiophene-alt-didodecylbithiazole) (PQTBTz-C12) thin films generated heat energy through the photo-thermal effect, leading to the crystallization of PQTBTz-C12 and formation of nodule-like nanostructures. The IPWL-induced crystallization of PQTBTz-C12 resulted in a threefold improvement in the field-effect mobility of thin film transistors compared to as-prepared devices. The conformational change of the PQTBTz-C12 chains was found to be strongly related to the irradiation fluence. As a proof-of-concept, the IPWL treatment was successfully applied to the PQTBTz-C12 layer in flexible transistors based on plastic substrates. The performance of these flexible devices was significantly improved after only 0.6 s of IPWL treatment, without deformation of the plastic substrate.
URI
http://pubs.rsc.org/en/Content/ArticleLanding/2016/CP/C5CP06989K#!divAbstracthttp://hdl.handle.net/20.500.11754/30433
ISSN
1463-9076; 1463-9084
DOI
10.1039/c5cp06989k
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > CHEMICAL ENGINEERING(화학공학과) > Articles
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