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Nanoscale manipulation of the Mott insulating state coupled to charge order in 1T-TaS_2

Title
Nanoscale manipulation of the Mott insulating state coupled to charge order in 1T-TaS_2
Author
천상모
Keywords
DENSITY WAVES; LAYER COMPOUNDS; PHASE; GAP; SUPERCONDUCTIVITY; TRANSITIONS; 2H-TASE2; GATA4SE8; CRYSTAL; DRIVEN
Issue Date
2016-01
Publisher
NATURE PUBLISHING GROUP
Citation
NATURE COMMUNICATIONS, v. 7, Article number 10453
Abstract
The controllability over strongly correlated electronic states promises unique electronic devices. A recent example is an optically induced ultrafast switching device based on the transition between the correlated Mott insulating state and a metallic state of a transition metal dichalcogenide 1T-TaS2. However, the electronic switching has been challenging and the nature of the transition has been veiled. Here we demonstrate the nanoscale electronic manipulation of the Mott state of 1T-TaS2. The voltage pulse from a scanning tunnelling microscope switches the insulating phase locally into a metallic phase with irregularly textured domain walls in the charge density wave order inherent to this Mott state. The metallic state is revealed as a correlated phase, which is induced by the moderate reduction of electron correlation due to the charge density wave decoherence.
URI
https://www.nature.com/articles/ncomms10453http://hdl.handle.net/20.500.11754/30432
ISSN
2041-1723
DOI
10.1038/ncomms10453
Appears in Collections:
COLLEGE OF NATURAL SCIENCES[S](자연과학대학) > PHYSICS(물리학과) > Articles
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