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Real-time dielectric-film thickness measurement system for plasma processing chamber wall monitoring

Title
Real-time dielectric-film thickness measurement system for plasma processing chamber wall monitoring
Author
정진욱
Keywords
REACTOR
Issue Date
2015-12
Publisher
AMER INST PHYSICS
Citation
REVIEW OF SCIENTIFIC INSTRUMENTS, v. 86, NO 12, Article number 123502, Page. 1-5
Abstract
An in-situ real-time processing chamber wall monitoring system was developed. In order to measure the thickness of the dielectric film, two frequencies of small sinusoidal voltage (similar to 1 V) signals were applied to an electrically floated planar type probe, which is positioned at chamber wall surface, and the amplitudes of the currents and the phase differences between the voltage and current were measured. By using an equivalent sheath circuit model including a sheath capacitance, the dielectric thickness can be obtained. Experiments were performed in various plasma condition, and reliable dielectric film thickness was obtained regardless of the plasma properties. In addition, availability in commercial chamber for plasma enhanced chemical vapor deposition was verified. This study is expected to contribute to the control of etching and deposition processes and optimization of periodic maintenance in semiconductor manufacturing process. (C) 2015 AIP Publishing LLC.
URI
http://aip.scitation.org/doi/10.1063/1.4936770http://hdl.handle.net/20.500.11754/30031
ISSN
0034-6748; 1089-7623
DOI
10.1063/1.4936770
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ELECTRICAL AND BIOMEDICAL ENGINEERING(전기·생체공학부) > Articles
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