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dc.contributor.author소홍윤-
dc.date.accessioned2017-10-13T07:51:16Z-
dc.date.available2017-10-13T07:51:16Z-
dc.date.issued2015-12-
dc.identifier.citationACS NANO, v. 10, NO 1, Page. 124-132en_US
dc.identifier.issn1936-0851-
dc.identifier.issn1936-086X-
dc.identifier.urihttp://pubs.acs.org/doi/abs/10.1021/acsnano.5b05385-
dc.identifier.urihttp://hdl.handle.net/20.500.11754/29631-
dc.description.abstractBlock copolymer patterned holey silicon (HS) was successfully integrated into a micro device for simultaneous measurements of Seebeck coefficient, electrical conductivity, and thermal conductivity of the same HS microribbon. These fully integrated HS microdevices provided excellent platforms for the systematic investigation of thermoelectric transport properties tailored by the dimensions of the periodic hole array, that is, neck and pitch size, and the doping concentrations. Specifically, thermoelectric transport properties of HS with a neck size in the range of 16-34 nm and a fixed pitch size of 60 nm were characterized, and a clear neck size dependency was shown in the doping range of 3.1 x 10(18) to 6.5 x 10(19) cm(-3). At 300 K, thermal conductivity as low as 1.8 +/- 0.2 W/mK was found in HS with a neck size of 16 nm, while optimized zT values were shown in HS with a neck size of 24 nm. The controllable effects of holey array dimensions and doping concentrations on HS thermoelectric performance could aid in improving the understanding of the phonon scattering process in a holey structure and also in facilitating the development of silicon-based thermoelectric devices.en_US
dc.description.sponsorshipAuthors thank Dr. Kedar Hippalgaonkar and Dr. Renkun Chen for the insightful discussion, and Dr. Erik Garnett for the assist of low-stress SiN<INF>x</INF> growth with Stanford Nanofabrication Facility. We also thank the UC-Berkeley Marvel Nanofabrication Laboratory where most of the microdevice fabrication was performed. This work was supported by the Director, Office of Science, Office of Basic Energy Sciences, Materials Sciences and Engineering Division, of the U.S. Department of Energy under Contract No. DE-AC02-05CH11231 (Thermal).en_US
dc.language.isoenen_US
dc.publisherAMER CHEMICAL SOCen_US
dc.subjectthermoelectricsen_US
dc.subjectsilicon nanostructureen_US
dc.subjectholey siliconen_US
dc.subjectphonon transporten_US
dc.subjectthermal conductivityen_US
dc.titleSimultaneous Thermoelectric Property Measurement and Incoherent Phonon Transport in Holey Siliconen_US
dc.typeArticleen_US
dc.identifier.doi10.1021/acsnano.5b05385-
dc.relation.journalACS NANO-
dc.contributor.googleauthorLim, Jongwoo-
dc.contributor.googleauthorWang, Hung-Ta-
dc.contributor.googleauthorTang, Jinyao-
dc.contributor.googleauthorAndrews, Sean C.-
dc.contributor.googleauthorSo, Hongyun-
dc.contributor.googleauthorLee, Jaeho-
dc.contributor.googleauthorLee, Dong Hyun-
dc.contributor.googleauthorRussell, Thomas P.-
dc.contributor.googleauthorYang, Peidong-
dc.relation.code2015000639-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentDIVISION OF MECHANICAL ENGINEERING-
dc.identifier.pidhyso-
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COLLEGE OF ENGINEERING[S](공과대학) > MECHANICAL ENGINEERING(기계공학부) > Articles
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