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dc.contributor.author최창환-
dc.date.accessioned2017-09-13T08:12:02Z-
dc.date.available2017-09-13T08:12:02Z-
dc.date.issued2015-11-
dc.identifier.citationMICROELECTRONIC ENGINEERING, v. 147, Page. 206-209en_US
dc.identifier.issn0167-9317-
dc.identifier.issn1873-5568-
dc.identifier.urihttp://www.sciencedirect.com/science/article/pii/S0167931715003056?via%3Dihub-
dc.identifier.urihttp://hdl.handle.net/20.500.11754/29121-
dc.description.abstractWe have investigated the electrical characteristics - flat band voltage (V-FB) shift, equivalent oxide thickness (MT) scaling and charge trapping - of atomic layer deposition (ALD) La2O3 capped high-k gate dielectrics (HfO2, HfSiOx, and HfSiON) in the metal-oxide-semiconductor (MOS) device structure, where two different lanthanum precursors - C, lanthanum formamidinate, La(fAMD)(3), and a lanthanum betadiketonate, La(thd)(3), - were used for ALD capping layer. Regardless of precursors, La2O3 capping layer on the ALD high-k films leads to negative VFB shift and thinner EOT as increasing capping thickness. However, more shift and further EOT scaling are observed with La2O3 thin film using La(fAMD)(3). In addition, La2O3 capping layer using La(fAMD)(3) precursor shows lower interface state density (DO and stronger immunity against charge trapping than La2O3 capping layer with La(thd)(3) precursor. Similar trends are attained with Si containing HfO2 - HfSiOx and HfSiON, but amount of VFB shift and EOT reduction is smaller than that of HfO2-based device, resulting from suppressed La-diffusion due to stronger Si-O bonds as well as nitrogen blocking in the dielectrics. Published by Elsevier B.V.en_US
dc.description.sponsorshipThis research was supported by the IT R&D program of MKE/KEIT (10039174, Technology Development of 22 nm level Foundry Device and PDK) and the Future Semiconductor Device Technology Development Program (10044842) funded By MOTIE (Ministry of Trade, Industry & Energy) and KSRC (Korea Semiconductor Research Consortium).en_US
dc.language.isoenen_US
dc.publisherELSEVIER SCIENCE BVen_US
dc.subjectHigh-ken_US
dc.subjectV-FB shiften_US
dc.subjectLa2O3en_US
dc.subjectAtomic layer depositionen_US
dc.subjectEOTen_US
dc.titleElectrical characteristics of ALD La2O3 capping layers using different lanthanum precursors in MOS devices with ALD HfO2, HfSiOx, and HfSiON gate dielectricsen_US
dc.typeArticleen_US
dc.relation.volume147-
dc.identifier.doi10.1016/j.mee.2015.04.080-
dc.relation.page206-209-
dc.relation.journalMICROELECTRONIC ENGINEERING-
dc.contributor.googleauthorLim, Donghwan-
dc.contributor.googleauthorJung, Woo Suk-
dc.contributor.googleauthorKim, Young Jin-
dc.contributor.googleauthorChoi, Changhwan-
dc.relation.code2015001922-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentDIVISION OF MATERIALS SCIENCE AND ENGINEERING-
dc.identifier.pidcchoi-
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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