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dc.contributor.author김태환-
dc.date.accessioned2017-09-12T05:01:36Z-
dc.date.available2017-09-12T05:01:36Z-
dc.date.issued2015-11-
dc.identifier.citationIEEE ELECTRON DEVICE LETTERS, v. 36, NO 11, Page. 1212-1214en_US
dc.identifier.issn0741-3106-
dc.identifier.issn1558-0563-
dc.identifier.urihttp://ieeexplore.ieee.org/document/7272044/-
dc.identifier.urihttp://hdl.handle.net/20.500.11754/29086-
dc.description.abstractNon-volatile memory (NVM) devices using graphene quantum dots (GQDs) as charge trapping sites were fabricated with silver nanowires as top electrodes using solution process. The stacking structure consists of GQDs embedded between polymethylsilsesquioxane layers constructed on transparent flexible substrate. Hysteresis window was observed in the current-voltage plots, and the NVM devices are reprogrammable and stable up to 1 x 10(4) s with a distinct ON/OFF ratio of 10(4). In addition, the memory device shows the stable hysteresis window without obvious degradation upon bending under different curvature radii.en_US
dc.description.sponsorshipThis work was supported in part by the Natural Science Foundation of Fujian Province under Grant 2013J01233, in part by the Basic Science Research Program through the National Research Foundation of Korea under Grant 2013-016467 and Grant 2013R1A2A1A01016467, and in part by the National Natural Science Foundation of China under Grant 61377027. The review of this letter was arranged by Editor M. Jurczak. (Jian Lin and Poh Choon Ooi contributed equally to this work.) (Corresponding authors: Fushan Li and Tailiang Guo.)en_US
dc.language.isoenen_US
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INCen_US
dc.subjectGraphene quantum dotsen_US
dc.subjectsilver nanowiresen_US
dc.subjectflexibleen_US
dc.subjectnon-volatile memoryen_US
dc.titleSolution-Processed, Flexible, and Transparent Non-Volatile Memory With Embedded Graphene Quantum Dots in Polymethylsilsesquioxane Layersen_US
dc.typeArticleen_US
dc.relation.no11-
dc.relation.volume36-
dc.identifier.doi10.1109/LED.2015.2480119-
dc.relation.page1212-1214-
dc.relation.journalIEEE ELECTRON DEVICE LETTERS-
dc.contributor.googleauthorLin, Jian-
dc.contributor.googleauthorOoi, Poh Choon-
dc.contributor.googleauthorLi, Fushan-
dc.contributor.googleauthorGuo, Tailiang-
dc.contributor.googleauthorKim, Tae Whan-
dc.relation.code2015000488-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentDEPARTMENT OF ELECTRONIC ENGINEERING-
dc.identifier.pidtwk-
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COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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