Solution-Processed, Flexible, and Transparent Non-Volatile Memory With Embedded Graphene Quantum Dots in Polymethylsilsesquioxane Layers
- Title
- Solution-Processed, Flexible, and Transparent Non-Volatile Memory With Embedded Graphene Quantum Dots in Polymethylsilsesquioxane Layers
- Author
- 김태환
- Keywords
- Graphene quantum dots; silver nanowires; flexible; non-volatile memory
- Issue Date
- 2015-11
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Citation
- IEEE ELECTRON DEVICE LETTERS, v. 36, NO 11, Page. 1212-1214
- Abstract
- Non-volatile memory (NVM) devices using graphene quantum dots (GQDs) as charge trapping sites were fabricated with silver nanowires as top electrodes using solution process. The stacking structure consists of GQDs embedded between polymethylsilsesquioxane layers constructed on transparent flexible substrate. Hysteresis window was observed in the current-voltage plots, and the NVM devices are reprogrammable and stable up to 1 x 10(4) s with a distinct ON/OFF ratio of 10(4). In addition, the memory device shows the stable hysteresis window without obvious degradation upon bending under different curvature radii.
- URI
- http://ieeexplore.ieee.org/document/7272044/http://hdl.handle.net/20.500.11754/29086
- ISSN
- 0741-3106; 1558-0563
- DOI
- 10.1109/LED.2015.2480119
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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