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An Associative Memory Device Using a Magnetic Tunnel Junction

Title
An Associative Memory Device Using a Magnetic Tunnel Junction
Author
박완준
Keywords
Associative memory; magnetic tunnel junction (MTJ); neuromorphic engineering; spin-transfer torque
Issue Date
2015-11
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Citation
IEEE TRANSACTIONS ON MAGNETICS, v. 51, NO 11, Article Number 4401304, Page. 13041-13044
Abstract
We propose an associative memory device performing a nondeclarative characteristic, whose memory is recalled by association with independent experiences after a learning event is made. In this paper, the current-induced switching characteristics of a magnetic tunnel junction implement the concept of classical conditioning. This association in memory through the learning process is electrically perceived by means of resistance changes due to the magnetoresistance effect before and after the stimulus for association is accompanied by learning. It has been confirmed that the functionality of the proposed memory device completely presents the Pavlovian type of learning with a simple circuital scheme.
URI
http://ieeexplore.ieee.org/document/7122325/http://hdl.handle.net/20.500.11754/29004
ISSN
0018-9464; 1941-0069
DOI
10.1109/TMAG.2015.2444413
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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