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dc.contributor.author박완준-
dc.date.accessioned2017-09-08T06:44:09Z-
dc.date.available2017-09-08T06:44:09Z-
dc.date.issued2015-11-
dc.identifier.citationIEEE TRANSACTIONS ON MAGNETICS, v. 51, NO 11, Article Number 4401004, Page. 10041-10044en_US
dc.identifier.issn0018-9464-
dc.identifier.issn1941-0069-
dc.identifier.urihttp://ieeexplore.ieee.org/document/7118210/-
dc.identifier.urihttp://hdl.handle.net/20.500.11754/29001-
dc.description.abstractWe present the effects of Zr insertion (5%) in Co(65)Fe(20)B(10) on perpendicular magnetic anisotropy due to interfacial magnetization with MgO. Perpendicular magnetization is successfully formed with a stalking structure of Ta/CoFeBZr/MgO. The thickness margin for crossover of perpendicular and in-plane magnetization is increased to 1.52 nm with an enhancement of surface anisotropy energy because of reduced thickness dependence. The Gilbert damping parameter is determined to be as low as 0.004 based on the line width of ferromagnetic resonance. Moreover, the maximum effective anisotropy energy (K-eff) was 1.63 Merg/cm(3) for CoFeBZr.en_US
dc.language.isoenen_US
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INCen_US
dc.subjectAnisotropy energyen_US
dc.subjectCoFeBZren_US
dc.subjectdamping constanten_US
dc.subjectmagnetic tunnel junction (MTJ)en_US
dc.subjectperpendicular magnetic anisotropy (PMA)en_US
dc.titlePerpendicular Magnetic Anisotropy for CoFeBZr/MgOen_US
dc.typeArticleen_US
dc.relation.no11-
dc.relation.volume51-
dc.identifier.doi10.1109/TMAG.2015.2441754-
dc.relation.page10041-10044-
dc.relation.journalIEEE TRANSACTIONS ON MAGNETICS-
dc.contributor.googleauthorKil, Joon Pyo-
dc.contributor.googleauthorSuh, Dong Ik-
dc.contributor.googleauthorBae, Gi Yoon-
dc.contributor.googleauthorChoi, Won Joon-
dc.contributor.googleauthorKim, Guk Cheon-
dc.contributor.googleauthorNoh, Seung Mo-
dc.contributor.googleauthorPark, Wanjun-
dc.relation.code2015003355-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentDEPARTMENT OF ELECTRONIC ENGINEERING-
dc.identifier.pidwanjun-
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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