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Perpendicular Magnetic Anisotropy for CoFeBZr/MgO

Title
Perpendicular Magnetic Anisotropy for CoFeBZr/MgO
Author
박완준
Keywords
Anisotropy energy; CoFeBZr; damping constant; magnetic tunnel junction (MTJ); perpendicular magnetic anisotropy (PMA)
Issue Date
2015-11
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Citation
IEEE TRANSACTIONS ON MAGNETICS, v. 51, NO 11, Article Number 4401004, Page. 10041-10044
Abstract
We present the effects of Zr insertion (5%) in Co(65)Fe(20)B(10) on perpendicular magnetic anisotropy due to interfacial magnetization with MgO. Perpendicular magnetization is successfully formed with a stalking structure of Ta/CoFeBZr/MgO. The thickness margin for crossover of perpendicular and in-plane magnetization is increased to 1.52 nm with an enhancement of surface anisotropy energy because of reduced thickness dependence. The Gilbert damping parameter is determined to be as low as 0.004 based on the line width of ferromagnetic resonance. Moreover, the maximum effective anisotropy energy (K-eff) was 1.63 Merg/cm(3) for CoFeBZr.
URI
http://ieeexplore.ieee.org/document/7118210/http://hdl.handle.net/20.500.11754/29001
ISSN
0018-9464; 1941-0069
DOI
10.1109/TMAG.2015.2441754
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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