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Perpendicular Magnetization of Ta/Ru/Ta/Co/Fe/MgO Multilayer

Title
Perpendicular Magnetization of Ta/Ru/Ta/Co/Fe/MgO Multilayer
Author
박완준
Keywords
Fe/MgO; interfacial anisotropy; magnetic tunnel junction (MTJ); perpendicular magnetic anisotropy (PMA)
Issue Date
2015-11
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Citation
IEEE TRANSACTIONS ON MAGNETICS, v. 51, NO 11, Page. 43041-43044
Abstract
Ta/Ru/Ta/Co/Fe/MgO film is studied to investigate the separate roles of Co and Fe in perpendicular magnetic anisotropy. Perpendicular magnetization is successfully obtained in this structure after a field annealing process (275 degrees C, 3 T, 30 min). Surface magnetic anisotropy at the Fe/MgO interface induces perpendicular magnetization for the Co/Fe bilayer with the critical contribution of the inserted Co. Magnetization properties resulting from the use of various Co and Fe layer thicknesses in the range of 0.36-0.6 nm (Co) and 0.52-0.91 nm (Fe) are analyzed, indicating the formation of a magnetic dead layer between the Co layer and the Ta seed layer. The maximum effective anisotropy energy (K-eff) is estimated as 1.63x10(5) J/m(3) for Co (0.36 nm)/Fe (0.65 nm).
URI
http://ieeexplore.ieee.org/document/7114291/http://hdl.handle.net/20.500.11754/29000
ISSN
0018-9464; 1941-0069
DOI
10.1109/TMAG.2015.2438324
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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