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Origins of Highly Stable Al-evaporated Solution-processed ZnO Thin Film Transistors: Insights from Low Frequency and Random Telegraph Signal Noise

Title
Origins of Highly Stable Al-evaporated Solution-processed ZnO Thin Film Transistors: Insights from Low Frequency and Random Telegraph Signal Noise
Author
홍진표
Keywords
ROOM-TEMPERATURE; OXIDE; PERFORMANCE; SEMICONDUCTORS; FABRICATION; STABILITY
Issue Date
2015-11
Publisher
NATURE PUBLISHING GROUP
Citation
SCIENTIFIC REPORTS, v. 5, Article Number 16123, Page. 1-9
Abstract
One long-standing goal in the emerging field of flexible and transparent electronic devices is to meet the demand of key markets, such as enhanced output performance for metal oxide semiconductor thin film transistors (TFTs) prepared by a solution process. While solution-based fabrication techniques are cost-effective and ensure large-area coverage at low temperature, their utilization has the disadvantage of introducing large trap states into TFTs. Such states, the formation of which is induced by intrinsic defects initially produced during preparation, have a significant impact on electrical performance. Therefore, the ability to enhance the electrical characteristics of solution-processed TFTs, along with attaining a firm understanding of their physical nature, remains a key step towards extending their use. In this study, measurements of low-frequency noise and random telegraph signal noise are employed as generic alternative tools to examine the origins of enhanced output performance for solution-processed ZnO TFTs through the control of defect sites by Al evaporation.
URI
https://www.nature.com/articles/srep16123http://hdl.handle.net/20.500.11754/28983
ISSN
2045-2322
DOI
10.1038/srep16123
Appears in Collections:
COLLEGE OF NATURAL SCIENCES[S](자연과학대학) > PHYSICS(물리학과) > Articles
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