Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 김은규 | - |
dc.date.accessioned | 2017-09-06T05:33:46Z | - |
dc.date.available | 2017-09-06T05:33:46Z | - |
dc.date.issued | 2015-11 | - |
dc.identifier.citation | NANOSCALE, v. 7, NO 41, Page. 17556-17562 | en_US |
dc.identifier.issn | 2040-3364 | - |
dc.identifier.issn | 2040-3372 | - |
dc.identifier.uri | http://pubs.rsc.org/en/Content/ArticleLanding/2015/NR/C5NR04397B#!divAbstract | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11754/28944 | - |
dc.description.abstract | Unsuppressed carrier scattering from the underlying substrate in a layered two-dimensional material system is extensively observed, which degrades significantly the performance of devices. Beyond the material itself, understanding the intrinsic interfacial and surficial properties is an important issue for the analysis of a high-kappa/MoS2 heterostructure. Here, we report on the electronic transport properties of bridge-channel MoS2 field-effect transistors fabricated by a contamination-free transfer method. After neglecting all the surrounding perturbations, it is possible to reveal the significant improvement of room-temperature mobility and subthreshold slope. A systematic study on variable-temperature transport measurements has quantified the trap density of states both in free-standing and SiO2-supported MoS2 systems. Compared to the bridge-channel MoS2 devices with an ideal interface, the unsuspended devices have a large amount of band tail states, and then the impact of their electronic states on the device performance is also discussed. | en_US |
dc.description.sponsorship | This work was supported by a National Research Foundation of Korea (NRF) grant funded by the Korean government (MSIP) (NRF-2013R1A2A2A01015824). | en_US |
dc.language.iso | en | en_US |
dc.publisher | ROYAL SOC CHEMISTRY | en_US |
dc.subject | SINGLE-LAYER MOS2 | en_US |
dc.subject | ATOMICALLY THIN MOS2 | en_US |
dc.subject | HIGH-PERFORMANCE | en_US |
dc.subject | MOLYBDENUM-DISULFIDE | en_US |
dc.subject | MONOLAYER MOS2 | en_US |
dc.subject | GRAPHENE | en_US |
dc.subject | MOBILITY | en_US |
dc.subject | STATES | en_US |
dc.subject | HETEROSTRUCTURES | en_US |
dc.subject | OPTOELECTRONICS | en_US |
dc.title | Transport properties of unrestricted carriers in bridge-channel MoS2 field-effect transistors | en_US |
dc.type | Article | en_US |
dc.relation.no | 41 | - |
dc.relation.volume | 7 | - |
dc.identifier.doi | 10.1039/c5nr04397b | - |
dc.relation.page | 17556-17562 | - |
dc.relation.journal | NANOSCALE | - |
dc.contributor.googleauthor | Qiu, Dongri | - |
dc.contributor.googleauthor | Lee, Dong Uk | - |
dc.contributor.googleauthor | Park, Chang Soo | - |
dc.contributor.googleauthor | Lee, Kyoung Su | - |
dc.contributor.googleauthor | Kim, Eun Kyu | - |
dc.relation.code | 2015000055 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF NATURAL SCIENCES[S] | - |
dc.sector.department | DEPARTMENT OF PHYSICS | - |
dc.identifier.pid | ek-kim | - |
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