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Transport properties of unrestricted carriers in bridge-channel MoS2 field-effect transistors

Title
Transport properties of unrestricted carriers in bridge-channel MoS2 field-effect transistors
Author
김은규
Keywords
SINGLE-LAYER MOS2; ATOMICALLY THIN MOS2; HIGH-PERFORMANCE; MOLYBDENUM-DISULFIDE; MONOLAYER MOS2; GRAPHENE; MOBILITY; STATES; HETEROSTRUCTURES; OPTOELECTRONICS
Issue Date
2015-11
Publisher
ROYAL SOC CHEMISTRY
Citation
NANOSCALE, v. 7, NO 41, Page. 17556-17562
Abstract
Unsuppressed carrier scattering from the underlying substrate in a layered two-dimensional material system is extensively observed, which degrades significantly the performance of devices. Beyond the material itself, understanding the intrinsic interfacial and surficial properties is an important issue for the analysis of a high-kappa/MoS2 heterostructure. Here, we report on the electronic transport properties of bridge-channel MoS2 field-effect transistors fabricated by a contamination-free transfer method. After neglecting all the surrounding perturbations, it is possible to reveal the significant improvement of room-temperature mobility and subthreshold slope. A systematic study on variable-temperature transport measurements has quantified the trap density of states both in free-standing and SiO2-supported MoS2 systems. Compared to the bridge-channel MoS2 devices with an ideal interface, the unsuspended devices have a large amount of band tail states, and then the impact of their electronic states on the device performance is also discussed.
URI
http://pubs.rsc.org/en/Content/ArticleLanding/2015/NR/C5NR04397B#!divAbstracthttp://hdl.handle.net/20.500.11754/28944
ISSN
2040-3364; 2040-3372
DOI
10.1039/c5nr04397b
Appears in Collections:
COLLEGE OF NATURAL SCIENCES[S](자연과학대학) > PHYSICS(물리학과) > Articles
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