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Evaluation of Metal Absorber Materials for Beyond Extreme Ultraviolet Lithography

Title
Evaluation of Metal Absorber Materials for Beyond Extreme Ultraviolet Lithography
Author
안진호
Keywords
Beyond EUVL; Mask; Metal; Absorber
Issue Date
2015-11
Publisher
AMER SCIENTIFIC PUBLISHERS
Citation
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v. 15, NO 11, SI, Page. 8652-8655
Abstract
In addition to the development of extreme ultraviolet lithography (EUVL), studies on beyond extreme ultraviolet lithography (BEUVL), which uses radiation with a wavelength of 6.7 nm, are in progress for their application in high-volume manufacturing. The BEUV wavelength, which is much shorter than the EUV wavelength, improves the resolution of patterned features. However, suitable materials for the mask stack of BEUVL are still under development. In this study, the applicability of metallic materials, such as Ni, Co, Ir, W, and Ta, as the absorber in a binary-intensity BEUVL mask was evaluated. The mask-imaging properties were simulated by adopting a thickness that ensured a reflectivity of ˂1% for each material. Furthermore, we used a multilayered La/B mirror which exhibited a high reflectivity at a wavelength of 6.7 nm because BEUV light is absorbed by most materials, and therefore uses reflective optics as desired. The numerical aperture (NA), angle of incidence, and demagnification factor were 0.5 and 0.6, 6 degrees, and 8x, respectively. We confirmed that a line-and-space pattern with a half-pitch of 11 nm can be patterned with metallic absorbers by using a high NA.
URI
http://www.ingentaconnect.com/content/asp/jnn/2015/00000015/00000011/art00053http://hdl.handle.net/20.500.11754/28888
ISSN
1533-4880; 1533-4899
DOI
10.1166/jnn.2015.11512
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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